EE 330 Final Exam Fall 2010

EE 330 Final Exam Fall 2010 - EE 330 Final Exam Fall 2010...

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EE 330 Name_ _ _ _ _ _ _ _ _ _ _ _ _ _ Final Exam Fall 2010 Instructions. Students may bring 3 pages of notes (3 front + 3 back) to this exam. There are 8 questions and 8 problems. The points allocated to each question are as indicated. The problems are all worth 10 points. Please solve problems in the space provided on this exam and attach extra sheets only if you run out of space in solving a specific problem. If references semiconductor processes are needed beyond what is given in a specific problem or question, assume a CMOS process is available with the following key process parameters; μ n C OX =100 μ A/v 2 p C OX = μ n C OX /3 ,V TNO =0.5V, V TPO = - 0.5V, C OX =2fF/ μ 2 , λ = 0, and γ = 0. If reference to a bipolar process is made, assume this process has key process parameters for an npn transistor are J S =10 -15 A/ μ 2 , β n =100 and V AFn = and those for a pnp transistor are J S =10 -15 A/ μ 2 , β p =20 and V AFp = . If any other process parameters are needed, use the process parameters associated with the process described on the last page of this exam. Specify clearly what process parameters you are using in any solution requiring process parameters. Several tables that may be of use are appended at the end of the exam. 1. (4 pts) If a die is of area 4mm 2 and the defect density is 1.5/mm 2 , determine the hard yield of these die on a wafer. 2. (2 pts) Why is C OX for the n-channel transistors and the p-channel transistors nearly identical in the 0.5 μ ON CMOS process discussed in class? 3. (2 pts) Pass transistor logic often results in logic circuits with less transistors than static CMOS. There are two major limitations of pass transistor logic. What are they? 4. (4pts) If you could create a mono-layer of silicon atoms, how many atoms would there be in the area required for the gate of a minimum-sized n-channel transistor in a 20nm process?
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