EE 330 Final Exam Spring 2011

EE 330 Final Exam Spring 2011 - EE 330 Final Exam Spring...

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Page 1 of 15 EE 330 Name_ _ _ _ _ _ _ _ _ _ _ _ _ _ Final Exam Spring 2011 Instructions. Students may bring 3 pages of notes (3 front + 3 back) to this exam. There are 9 questions and 8 problems. The points allocated to each question are as indicated. The problems are all worth 10 points. Please solve problems in the space provided on this exam and attach extra sheets only if you run out of space in solving a specific problem. If references semiconductor processes are needed beyond what is given in a specific problem or question, assume a CMOS process is available with the following key process parameters; n C OX =100 A/v 2  p C OX = n C OX /3 ,V TNO =0.5V, V TPO = - 0.5V, C OX =2fF/ 2 , = 0, and    If reference to a bipolar process is made, assume this process has key process parameters for an npn transistor are J S =10 -15 A/ 2 , β n =100 and V AFn = ∞ and those for a pnp transistor are J S =10 -15 A/ 2 , β p =20 and V AFp = ∞. If any other process parameters are needed, use the process parameters associated with the process described on the last page of this exam. Specify clearly what process parameters you are using in any solution requiring process parameters. Several tables that may be of use are appended at the end of the exam. 1. (2 pts) There are two types of photoresist. What are they? Briefly describe how they differ. 2. (2 pts) In the context of electronic devices, what property does the term “unilateral” characterize? 3. (2 pts) What is the purpose of planarization steps in a semiconductor process? 4. (2pts) Why are design rules typically given in terms of multiples of a parameter (λ) rather than given directly in standard units such as microns?
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EE 330 Final Exam Spring 2011 - EE 330 Final Exam Spring...

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