EE 330 Lab 6 Spring 2011

EE 330 Lab 6 Spring 2011 - EE 330 Laboratory 6 Models for...

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1 EE 330 Laboratory 6 Models for MOS Devices Spring 2011 Part 1: Introduction The mathematical relationship between the terminal currents and voltages for a device is termed the device model. Although the basic operation of the MOS transistor is quite straightforward, the task of obtaining a mathematical model for the device that accurately predicts characteristics that can be measured in the laboratory is quite challenging. A large number of models for the MOS transistor have been developed and the research community continues to work on developing even better models. Although there is considerable ongoing activity on modeling of the MOS transistor, a simple analytical model is widely used for hand calculations and most circuit design activities use the same simple analytical model. This model is often termed the square-law model and is characterized by the equations     1 GB GS T DS D OX GS T DS GS DS GS T 2 OX GS T DS GS T DS GS T I =I =0 0 V V V W I μC V V V V V V V V L2 W μC V V V V V V V V 2L T    where   T T0 BS V = V + -V - With this model, the device is characterized by the process parameters {μ,C OX ,V TO ,,λ,γ} and design parameters {W,L}; the rest are electrical port variables. A more accurate model is the BSIM model used in programs such as SPICE and SPECTRE. The basic BSIM 3 model has 97 parameters but extreme values for the BSIM model parameters (often termed corner models) are often included resulting in a several-fold increase in the total number of parameters. Even this model, however, is often not considered good enough so the concept of “binning models” is incorporated into existing simulators. A binning BSIM model would be a set of BSIM models that are optimized for given range of device sizes and operating conditions. The simulator would then
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EE 330 Lab 6 Spring 2011 - EE 330 Laboratory 6 Models for...

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