EE 330 Lab 9 Spring 2011

EE 330 Lab 9 Spring 2011 - EE 330 Laboratory 9...

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Page 1 of 7 EE 330 Laboratory 9 Semiconductor Parameter Measurement and Thyristor Applications Spring 2011 Objective: The objective of this laboratory experiment is to become familiar with using a semiconductor parameter analyzer for extracting model parameters for devices. A second objective is to develop an experimental understanding of the operation of the bipolar transistor and on relating the experimental performance to the models that were established in the lecture part of the course. A third objective is to combine concepts about operational amplifiers, logic circuits, and thyristors in the design of a light-activated circuit. Components Needed: 2N4400 BJT, MC 14007 transistor array, Q4015L5 Triac, Q4010LS2 SCR, XE2410 24V-0.5A incandescent lamp, operational amplifier, photo transistor, photo resistor, or photodiode, and other standard electronic components. Background: Measurement of parameters that characterize the performance of electronic devices using basic test equipment is a tedious process and generally requires a dedicated circuit for measuring each parameter for each device. This makes it somewhat time consuming to accurately characterize individual devices or make comparisons from one device to another. The semiconductor parameter analyzer is a device that has been designed to provide rapid measurement of device characteristics for a wide variety of electronic devices without the need for any specialized test circuits or test equipment. In the contexts of this course, the semiconductor parameter analyzer can be used to measure the characteristics of diodes, MOSFETs, BJTs, and Thyristors. Once proficiency with the semiconductor parameter analyzer is established, a rather complete characterization of a device can be made in a few minutes or less. In this experiment we will limit our use of the semiconductor parameter analyzer to the characterization of MOS transistors and BJTs. An electronic circuit designer is often required to bring concepts from several varying backgrounds together in the design of a useful circuit or system. The last part of this experiment focuses on combining knowledge about operational amplifiers, optical detectors, logic circuits, and Thyristors in the design of a laser-activated circuit.
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Page 2 of 7 1. Measurement of MOSFET parameters The parameters μ Cox , VT0, λ and γ are key parameters that characterize the MOS transistor along with the physical parameters W and L. Most of these parameters can be
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