EE 330 Lect 5 Fall 2011

EE 330 Lect 5 Fall 2011 - EE 330 Lecture 5 Digital Systems...

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EE 330 Lecture 5 Digital Systems – A preview Static CMOS Gates Other Logic Styles Improved Device Models
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Statistics Review y f N x f   1 N y f y dy  0 1 μ μ+ σ   1 x f x dx  x y   , xN    0,1 yN If the random variable x in Normally distributed with mean μ and standard deviation σ, then is also a random variable that is Normally distributed with mean 0 and standard deviation of 1. x y Review from Last Time
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Statistics Review x y x f μ μ+ σ   , xN  The random part of many parameters of microelectronic circuits is often assumed to be Normally distributed and experimental observations confirm that this assumption provides close agreement between theoretical and experimental results The mapping is often used simplify the statistical characterization of the random parameters in microelectronic circuits Review from Last Time
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Basic Logic Circuits
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Basic Logic Circuits • Will present a brief description of logic circuits based upon simple models and qualitative description of processes • Will discuss process technology needed to develop better models • Will provide more in-depth discussion of logic circuits based upon better device models
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Models of Devices • Several models of the electronic devices will be introduced – Complexity – Accuracy – Insight – Application • Will use the simplest model that can provide acceptable results for any given application
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MOS Transistor Qualitative Discussion of n-channel Operation Gate Drain Source Bulk n-channel MOSFET n-type n+-type p-type p+-type SiO 2 (insulator) POLY (conductor) Drain Gate Source Drain Gate Source Cross-Sectional View Top View Designer always works with top view Complete Symmetry in construction between Drain and Source
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MOS Transistor Qualitative Discussion of n-channel Operation Gate Drain Source Bulk n-channel MOSFET Drain Gate Source If V GS is large, short circuit exists between drain and source If V GS is small, open circuit exists between drain and source Behavioral Description of Basic Operation V GS
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Boolean/Continuous Notation: V DD Voltage Axis 0V G=0 G=1 Boolean Axis - Voltage Axis is Continuous between 0V and V DD - Boolean axis is discrete with only two points Most logic circuits characterized by the relationship between the Boolean input/output variables though these correspond to voltage ranges on the continuous voltage axis
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Qualitative Discussion of n-channel Operation Gate Drain Source Bulk n-channel MOSFET Drain Gate Source D S G = 0 D S G = 1 Equivalent Circuit for n-channel MOSFET This is the first model we have for the n-channel MOSFET ! Source assumed
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EE 330 Lect 5 Fall 2011 - EE 330 Lecture 5 Digital Systems...

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