EE 330 Lect 5 Spring 2011

EE 330 Lect 5 Spring 2011 - EE 330 Lecture 5 Digital...

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Unformatted text preview: EE 330 Lecture 5 Digital Systems A preview Static CMOS Gates Other Logic Styles Improved Device Models Quiz 4 Determine V H and V L at the C output for the Static CMOS NOR gate shown. Use the switch-level model for the transistors introduced in the last lecture. V DD B A C And the number is . 6 3 1 2 4 5 7 8 9 And the number is . 6 3 1 2 4 5 7 8 9 7 Quiz 4 Determine V H and V L at the C output for the Static CMOS NOR gate shown. Use the switch-level model for the transistors introduced in the last lecture. V DD B A C Solution: V H =V DD , V L =0V Statistics Review y f N x f 1 N y f y dy 1 + 1 x f x dx x y , x N 0,1 y N If the random variable x in Normally distributed with mean and standard deviation , then is also a random variable that is Normally distributed with mean 0 and standard deviation of 1. x y Review from Last Time Statistics Review x y x f + , x N The random part of many parameters of microelectronic circuits is often assumed to be Normally distributed and experimental observations confirm that this assumption provides close agreement between theoretical and experimental results The mapping is often used simplify the statistical characterization of the random parameters in microelectronic circuits Review from Last Time The Six-Sigma Challenge Long-term Capability Short-term Capability Tails are 6.8 parts in a million Tail is 2 parts in a billion Two-sided capability: Six Sigma Performance is Very Good !!! x f 4.5-4.5 x 6 f-6 Review from Last Time MOS Transistor Qualitative Discussion of n-channel Operation Gate Drain Source Bulk n-channel MOSFET Drain Gate Source D S G = 0 D S G = 1 Equivalent Circuit for n-channel MOSFET This is the first model we have for the n-channel MOSFET ! Review from Last Time MOS Transistor Qualitative Discussion of p-channel Operation n-type n+-type p-type p+-type S iO 2 (insulator) POLY (conductor) Gate Drain Source Bulk p-channel MOSFET Drain Gate Source Drain Gate Source Cross-Sectional View Top View Complete Symmetry in construction between Drain and Source MOS Transistor Qualitative Discussion of p-channel Operation Gate Drain Source Bulk p-channel MOSFET Drain Gate Source Equivalent Circuit for p-channel MOSFET D S G = 1 D S G = 0 This is the first model we have for the p-channel MOSFET ! Review from Last Time MOS Transistor Comparison of Operation Drain Gate Source Drain Gate Source D S G = 1 D S G = 0 D S G = 0 D S G = 1 Logic Circuits V DD A B V DD A = 1 B V DD A = 0 B = 0 = 1 Circuit Behaves as a Boolean Inverter Review from Last Time Logic Circuits V DD A B Inverter A B 0 1 1 0 Truth Table Review from Last Time Logic Circuits A B C 0 0 1 0 1 0 1 0 0 1 1 0 Truth Table NOR Gate A B C V DD Review from Last Time Logic Circuits A B C 0 0 1 0 1 1 1 0 1 1 1 0 Truth Table NAND Gate V DD A B C Review from Last Time Other logic circuits...
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EE 330 Lect 5 Spring 2011 - EE 330 Lecture 5 Digital...

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