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EE 330 Lect 13 Spring 2011

EE 330 Lect 13 Spring 2011 - EE 330 Lecture 13 Devices in...

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EE 330 Lecture 13 Devices in Semiconductor Processes
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Quiz 11 Consider a p-n junction comprised of uniformly doped p-type and n-type materials where the doping density of the p-type material is 5 times that of the n-type material. If under zero bias the depletion region extends a distance x into the p-type region, give the total thickness of the depletion region in terms of x for the p-n junction. x d = ? p-type n-type
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And the number is …. 6 3 1 2 4 5 7 8 9
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And the number is …. 6 3 1 2 4 5 7 8 9 3
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