EE 330 Lect 14 Spring 2011

EE 330 Lect 14 - EE 330 Lecture 14 Devices in Semiconductor Processes Diodes Capacitors MOS Transistors Review from Last Time Review from Last Time

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EE 330 Lecture 14 Devices in Semiconductor Processes Diodes Capacitors MOS Transistors
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Review from Last Time
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http://www.oftc.usyd.edu.au/edweb/devices/semicdev/doping4.html Review from Last Time
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Review from Last Time
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Review from Last Time
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B (Boron) widely used a dopant for creating p-type regions P (Phosphorus) widely used a dopant for creating n-type regions (bulk doping, diffuses fast) As (Arsenic) widely used a dopant for creating n-type regions (Active region doping, diffuses slower) Silicon Dopants in Semiconductor Processes Review from Last Time
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Diodes (pn junctions) Depletion region created that is ionized but void of carriers Review from Last Time
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pn Junctions V I 0 V 0 0 V Ae J I T nV V S I V Diode Equation: (good enough for most applications) J S = Sat Current Density (in the 1aA/u 2 to 1fA/u 2 range) A= Junction Cross Section Area V T =kT/q (k/q=1.381x10 -23 V•C/°K/1.6x10 -19 C=8.62x10 -5 V/°K) n is approximately 1 Anode Cathode Note: I S =J s A Review from Last Time
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R I V V D D IN R I V D OUT 1 e I I t d V V S D V IN R I D V D V OUT 1 e R I V t OUT IN V V V S OUT Consider again the basic rectifier circuit Even the simplest diode circuit does not have a closed-form solution when diode equation is used to model the diode !! Due to the nonlinear nature of the diode equation Simplifications are essential if analytical results are to be obtained Review from Last Time
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Diode Characteristics 0 2000 4000 6000 8000 10000 0 0.2 0.4 0.6 0.8 1 Vd (volts) Id (amps) Power Dissipation Becomes Destructive if Vd > 0.85V (actually less) 1 e I I t d V V S d
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For two decades of current change, Vd is close to 0.6V Diode Characteristics 1E-12 1E-10 1E-08 1E-06 0.0001 0.01 1 100 10000 0 0.2 0.4 0.6 0.8 1 Vd (volts) Id (amps) This is the most useful current range for many applications 1 e I I t d V V S d
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For two decades of current change, Vd is close to 0.6V This is the most useful current range for many applications Diode Characteristics 0 0.002 0.004 0.006 0.008 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Vd (volts) Id (amps) 1 e I I t d V V S d
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Diode Characteristics 0 0.002 0.004 0.006 0.008 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Vd (volts) Id (amps) Widely Used Piecewise Linear Model 1 e I I t d V V S d 0 I 0.6V V 0.6V V 0 I d d d d
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Diode Characteristics 0 0.002 0.004 0.006 0.008 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Vd (volts) Id (amps)
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EE 330 Lect 14 - EE 330 Lecture 14 Devices in Semiconductor Processes Diodes Capacitors MOS Transistors Review from Last Time Review from Last Time

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