EE 330 Lect 15 Spring 2011

EE 330 Lect 15 Spring 2011 - EE 330 Lecture 15 Devices in...

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EE 330 Lecture 15 Devices in Semiconductor Processes the MOS Transistor
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Fringe Capacitors d C d A ε C A is the area where the two plates are parallel Only a single layer is needed to make fringe capacitors Review from Last Time
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Capacitance 2 φ V φ V 1 A C C B FB n B D jo for Junction Capacitor 0.6V φ B n ; 0.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -4 -3 -2 -1 0 1 j0 C CA V D Voltage dependence is substantial V D Review from Last Time
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n-Channel MOSFET L EFF L W Source Drain Gate Bulk Review from Last Time
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n-Channel MOSFET Operation and Model V BS V GS V DS Apply small V GS (V DS and V BS assumed to be small) I D =0 I G =0 I B =0 Depletion region electrically induced in channel I D I G I B Termed “cutoff” region of operation Review from Last Time
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n-Channel MOSFET Operation and Model V BS V GS V DS Increase V GS more I D R CH =V DS I G =0 I B =0 Inversion layer forms in channel I D I G I B (V DS and V BS small) Inversion layer will support current flow from D to S Channel behaves as thin-film resistor Critical value of V GS that creates inversion layer termed threshold voltage, V T ) Review from Last Time
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n-Channel MOSFET Operation and Model V BS V GS V DS Increase V GS more I D R CH =V DS I G =0 I B =0 Inversion layer in channel thickens I D I G I B (V DS and V BS small) R CH will decrease Termed “ohmic” or “triode” region of operation
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Triode Region of Operation V DS V BS = 0 V GS I D I G I B   OX T GS CH C V V 1 W L R   0 I I V V V L W μC I B G DS T D For V DS small
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n-Channel MOSFET Operation and Model V BS V GS V DS Increase V DS I D =? I G =0 I B =0 Inversion layer thins near drain I D I G I B (V BS small) I D no longer linearly dependent upon V DS Still termed “ohmic” or “triode” region of operation
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Triode Region of Operation V DS V BS = 0 V GS I D I G I B   OX T GS CH C V V 1 W L R 0 I I V 2 V V V L W μC I B G DS DS T D For V DS larger
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EE 330 Lect 15 Spring 2011 - EE 330 Lecture 15 Devices in...

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