EE 330 Lect 16 Spring 2011

EE 330 Lect 16 Spring 2011 - EE 330 Lecture 16 MOS...

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EE 330 Lecture 16 MOS Transistor Models CMOS Process Flow
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Graphical Interpretation of MOS Model   GS T DS D OX GS T DS GS DS GS T 2 OX GS T GS T DS GS T 0 V V V W I μC V V V V V V V V L2 W μC V V V V V V V 2L T    Review from Last Time
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Model Extensions 0 50 100 150 200 250 300 0 1 2 3 4 5 Vds Id 0 50 100 150 200 250 300 0 1 2 3 4 Existing Model Actual Device Slope is not 0 Review from Last Time
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V T V T0 V BS ~ -5V   BS T0 T V V V Typical Effects of Bulk on Threshold Voltage for n-channel Device 1 - 2 0.4V 0.6V Bulk-Diffusion Generally Reverse Biased (V BS < 0 or at least less than 0.3V) for n- channel Shift in threshold voltage with bulk voltage can be substantial Often V BS =0 Review from Last Time
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Model Extension Summary     1 GS T DS D OX GS T DS GS DS GS T 2 OX GS T DS GS T DS GS T 0 V V V W I μC V V V V V V V V L2 W μC V V V V V V V V 2L T      BS T0 T V V V Model Parameters : { μ ,C OX ,V T0 , φ , γ , λ } Design Parameters : {W,L} but only one degree of freedom W/L 0 I 0 I B G Review from Last Time
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Operation Regions by Applications 0 5 Saturation Region Triode Region Cutoff Region Analog Circuits Digital Circuits D I DS V Most analog circuits operate in the saturation region (basic VVR operates in triode and is an exception) Most digital circuits operate in triode and cutoff regions and switch between these two with Boolean inputs
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0 50 100 150 200 250 300 0 5 Analog Circuits D I DS V Output Impedance Model in Saturation Region     1 2 D OX GS T DS W I=μC V V 2L λV  In saturation region     2 D OX GS T 2 T D OX S GS W V V W λ 2L μV 2 V CV L      2 D OX D Q ST S DE G W I 1 V R =μC V V 2L   2 OX GS T DEQ W μC V V 2L R λ =
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0 50 100 150 200 250 300 0 5 Analog Circuits D I DS V Output Impedance Model in Saturation Region     1 2 D OX GS T DS W I=μC V V 2L λV  In saturation region V GS   2 OX GS T W μC V V 2L R DEQ V DS I D G S D G S D   2 D OX D Q ST S DE G W I 1 V R =μC V V 2L      2 OX GS T DNOM DEQ λ W μC V V I 2L R= λ
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EE 330 Lect 16 Spring 2011 - EE 330 Lecture 16 MOS...

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