EE 330 Lect 18 Fall 2011

EE 330 Lect 18 Fall 2011 - EE 330 Lecture 18...

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Unformatted text preview: EE 330 Lecture 18 Characteristics of Finer Feature Size Processes Bipolar Process How does the inverter delay compare between a 0.5u process and a 0.13u process? V IN V OUT V DD V SS V IN V OUT How does the inverter delay compare between a 0.5u process and a 0.13u process? V IN V OUT Assume n-channel and p-channel devices are minimum sized Basic Devices and Device Models Resistor Diode Capacitor MOSFET BJT Bipolar Junction Transistors Operation Modeling Carriers in Doped Semiconductors n-type p-type Carriers in Doped Semiconductors V I V I Current carriers are dominantly electrons Current carriers are dominantly holes Small number of holes are short-term carriers Small number of electrons are short-term carriers Carriers in Doped Semiconductors Majority Carriers Minority Carriers n-type electrons holes p-type holes electrons Carriers in MOS Transistors Consider n-channel MOSFET Saturation Region Triode Region Channel Carriers in MOS Transistors Consider n-channel MOSFET Saturation Region Triode Region Carriers in electrically induced n-channel are electrons Carriers in MOS Transistors Consider p-channel MOSFET Saturation Region Triode Region Channel Carriers in MOS Transistors Consider p-channel MOSFET Saturation Region Triode Region Carriers in electrically induced p-channel are holes Carriers in MOS Transistors Carriers in channel of MOS transistors are Majority carriers Bipolar Transistors npn stack pnp stack E E B B C C With proper doping and device sizing these form Bipolar Transistors pnp transistor B C E npn transistor B C E Bipolar Devices Show Basic Symmetry Electrical Properties not Symmetric Designation of C and E critical Bipolar Transistors pnp transistor B C E npn transistor B C E n-channel MOSFET p-channel MOSFET In contrast to a MOSFET which has 4 terminals, a BJT only has 3 terminals Bipolar Operation npn stack E B C Under forward bias current flow into base and out of emitter Consider npn transistor...
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EE 330 Lect 18 Fall 2011 - EE 330 Lecture 18...

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