EE 330 Lect 22 Spring 2011

EE 330 Lect 22 Spring 2011 - EE 330 Lecture 22 Bipolar...

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EE 330 Lecture 22 Bipolar Processes Thyristors
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A-A’ Section B-B’ Section E C B vertical npn B C E E B C E C B lateral pnp C B E B C E Review from Last Lecture
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A-A’ Section B-B’ Section G D S S D G p-channel JFET Review from Last Lecture
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B E C E B C E C B lateral pnp E C B vertical npn B C E E C B Review from Last Lecture
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L G D S W Resistor Diode (capacitor) G D S S D G n-channel JFET Review from Last Lecture
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The vertical npn transistor Emitter area only geometric parameter that appears in basic device model Transistor much larger than emitter Base region very thin to provide large β Multiple-emitter devices often used (TTL Logic) and don’t significantly increase area The “flagship” device in most bipolar processes Review from Last Lecture
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Enhancement and Depletion MOS Devices • Enhancement Mode n-channel devices V T > 0 • Enhancement Mode p-channel devices V T < 0 • Depletion Mode n-channel devices V T < 0 • Depletion Mode p-channel devices V T > 0
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The JFET In triode region under reverse bias (channel thins) S D G S D G
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The JFET In saturation (pinch-off) region under reverse bias and large V DS (channel pinches off) S D G S D G
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The JFET S D G GS P DSS DS D GS P DS GS P DS GS P 2 P 2 GS DSS GS P DS GS P P 0 V V 2I V I V -V - V V V V < V -V V2 V I 1- V V V < V -V V     D D S S G G n-channel p-channel p-channel JFET Square-law model of n-channel JFET Functionally identical to the square-law model of MOSFET Parameters I DSS and V P characterize the device I DSS proportinal to W/L where W and L are width and length of n+ diff V P is negative for n-channel device, positive for p-channel device thus JFET is depletion mode device Must not forward bias GS junction by over about 300mV or excessive base current will flow
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The Schottky Diode C A Metal-Semiconductor Junction One contact is ohmic, other is rectifying
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EE 330 Lect 22 Spring 2011 - EE 330 Lecture 22 Bipolar...

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