EE 330 Lect 23 Fall 2011

EE 330 Lect 23 Fall 2011 - EE 330 Lecture 23 Area...

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EE 330 Lecture 23 Area Comparison between MOS and Bipolar Circuits Operating Point Characterization Amplification with Transistor Circuits
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Bi-directional switching with the Triac G p n n n MT 1 n n • Has two cross-coupled SCRs ! • Manufactured by diffusions • Single Gate Control MT 1 MT 2 G Review from Last Lecture
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The Basic Triac Circuit Assume ideal Triac I T V TR I G =0 I H BGF V BGF -V AC L V R AC V AC -V AC L V R CC T L TR V = I R +V Load Line: The solution of these two equations is at the intersection of the load line and the device characteristics Analysis: AC T L TR   , FI TR GT1 I = f V V I T V TR I G =0 I H BGF V BGF -V AC L V R AC V AC -V AC L V R Two stable operating points for both positive and negative V AC V AC V GT1 R L V TR I T Review from Last Lecture
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I T V TR I G4 >I G3 >I G2 >I G1 =0 MT 1 MT 2 G The Actual Triac Review from Last Lecture
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The Actual Triac in Basic Circuit I F V F I G4 >I G3 >I G2 >I G1 =0 AC V AC - V AC L V R AC L V R I F V F I G4 >I G3 >I G2 >I G1 =0 AC V AC - V AC L V R AC L V R Can turn on for either positive or negative V AC with single gate signal V AC V GT1 R L V TR I T Review from Last Lecture
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The Thyristor S G D G S D Consider a Bulk-CMOS Process A bipolar device in CMOS Processes If this parasitic SCR turns on, either circuit will latch up or destroy itself Guard rings must be included to prevent latchup Design rules generally include provisions for guard rings Review from Last Lecture
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MOS and Bipolar Area Comparisions How does the area required to realize a MOSFET compare to that required to realize a BJT? Will consider a minimum-sized device in both processes
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1 5 10 15 20 25 30 35 40 45 50 60 55 70 65 75 1 5 10 20 15 30 25 40 35 50 45 55 Consider Initially the Emitter in the BJT surrounded by a base region
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1 5 10 15 20 25 30 35 40 45 50 60 55 70 65 75 1 5 10 20 15 30 25 40 35 50 45 55 From design rules (left to right) 4.3, 5.1, 5.4, 5.6, 5.5 3 4 2 2 2 19 12
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1 5 10 15 20 25 30 35 40 45 50 60 55 70 65 75 1 5 10 20 15 30 25 40 35 50 45 55 23 2 Add n+ buried for collector From design rule 1.2
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1 5 10 15 20 25 30 35 40 45 50 60 55 70 65 75 1 5 10 20 15 30 25 40 35 50 45 55 23 14 14 51 14 14 Add n-epi region from design rules 2.3 and 3.3
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1 5 10 15 20 25 30 35 40 45 50 60 55 70 65 75 1 5 10 20 15 30 25 40 35 50 45 55 3 2 23 14 51 14 4 Add contact to n-epi region from design rules 2.3 and 3.3
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1 5 10 15 20 25 30 35 40 45 50 60 55 70 65 75 1 5 10 20 15 30 25 40 35 50 45 55 14 61 14 4 6 12 2 2 NOT TO SCALE Note: 26 required Between p-base and isolation diffusion 19 But, there are some rather strict rules relating to the epi contact from (left to right) rules 4.4, 5.4, 4.6
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1 5 10 15 20 25 30 35 40 45 50 60 55 70 65 75 1 5 10 20 15 30 25 40 35 50 45 55 26 71 6 12 2 2 Note: 26 required
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This document was uploaded on 01/31/2012.

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EE 330 Lect 23 Fall 2011 - EE 330 Lecture 23 Area...

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