EE 330 Lect 24 Spring 2011

EE 330 Lect 24 Spring 2011 - EE 330 Lecture 24 Area...

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EE 330 Lecture 24 Area Comparison between MOS and Bipolar Circuits Operating Point Characterization Amplification with Transistor Circuits
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Bi-directional switching with the Triac G p n n n MT 1 n n • Has two cross-coupled SCRs ! • Manufactured by diffusions • Single Gate Control MT 1 MT 2 G Review from Last Lecture
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The Basic Triac Circuit Assume ideal Triac I T V TR I G =0 I H BGF V BGF -V AC L V R AC V AC -V AC L V R CC T L TR V = I R +V Load Line: The solution of these two equations is at the intersection of the load line and the device characteristics Analysis: AC T L TR   , FI TR GT1 I = f V V I T V TR I G =0 I H BGF V BGF -V AC L V R AC V AC -V AC L V R Two stable operating points for both positive and negative V AC V AC V GT1 R L V TR I T Review from Last Lecture
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I T V TR I G4 >I G3 >I G2 >I G1 =0 MT 1 MT 2 G The Actual Triac Review from Last Lecture
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The Actual Triac in Basic Circuit I F V F I G4 >I G3 >I G2 >I G1 =0 AC V AC - V AC L V R AC L V R I F V F I G4 >I G3 >I G2 >I G1 =0 AC V AC - V AC L V R AC L V R Can turn on for either positive or negative V AC with single gate signal V AC V GT1 R L V TR I T Review from Last Lecture
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The Thyristor S G D G S D Consider a Bulk-CMOS Process A bipolar device in CMOS Processes If this parasitic SCR turns on, either circuit will latch up or destroy itself Guard rings must be included to prevent latchup Design rules generally include provisions for guard rings Review from Last Lecture
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MOS and Bipolar Area Comparisions How does the area required to realize a MOSFET compare to that required to realize a BJT?
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EE 330 Lect 24 Spring 2011 - EE 330 Lecture 24 Area...

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