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EE 330
Lecture 24
Area Comparison between MOS and Bipolar Circuits
Operating Point Characterization
Amplification with Transistor Circuits

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*Sign up* Bi-directional switching with the Triac
G
p
n
n
n
MT
1
n
n
• Has two cross-coupled SCRs !
• Manufactured by diffusions
• Single Gate Control
MT
1
MT
2
G
Review from Last Lecture

The Basic Triac Circuit
Assume ideal Triac
I
T
V
TR
I
G
=0
I
H
BGF
V
BGF
-V
AC
L
V
R
AC
V
AC
-V
AC
L
V
R
CC
T
L
TR
V = I R +V
Load Line:
The solution of these two equations is at the intersection of
the load line and the device characteristics
Analysis:
AC
T
L
TR
,
FI
TR
GT1
I = f V
V
I
T
V
TR
I
G
=0
I
H
BGF
V
BGF
-V
AC
L
V
R
AC
V
AC
-V
AC
L
V
R
Two stable operating points for both positive and negative V
AC
V
AC
V
GT1
R
L
V
TR
I
T
Review from Last Lecture

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*Sign up* I
T
V
TR
I
G4
>I
G3
>I
G2
>I
G1
=0
MT
1
MT
2
G
The Actual Triac
Review from Last Lecture

The Actual Triac in Basic Circuit
I
F
V
F
I
G4
>I
G3
>I
G2
>I
G1
=0
AC
V
AC
- V
AC
L
V
R
AC
L
V
R
I
F
V
F
I
G4
>I
G3
>I
G2
>I
G1
=0
AC
V
AC
- V
AC
L
V
R
AC
L
V
R
Can turn on for either positive or negative V
AC
with single gate signal
V
AC
V
GT1
R
L
V
TR
I
T
Review from Last Lecture

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*Sign up* The Thyristor
S
G
D
G
S
D
Consider a Bulk-CMOS Process
A bipolar device in CMOS Processes
If this parasitic SCR turns on, either circuit will latch up or destroy itself
Guard rings must be included to prevent latchup
Design rules generally include provisions for guard rings
Review from Last Lecture

MOS and Bipolar Area Comparisions
How does the area required to realize a MOSFET
compare to that required to realize a BJT?

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