EE 330 Lect 26 Spring 2011

EE 330 Lect 26 Spring 2011 - EE 330 Lecture 26...

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EE 330 Lecture 26 Amplification with Transistor Circuits
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Consider the following MOSFET and BJT Circuits R 1 Q 1 V IN (t) V OUT V CC V EE BJT MOSFET R 1 V IN (t) V OUT V DD V SS M 1 MOS and BJT Architectures often Identical Circuit are Highly Nonlinear Nonlinear Analysis Methods Must be used to analyze these and almost any other nonlinear circuit Review from Last Lecture
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Methods of Analysis of Nonlinear Circuits Will consider three different analysis requirements and techniques for some particularly common classes of nonlinear circuits 1. Circuits with continuously differential devices Interested in obtaining transfer characteristics of these circuits or outputs for given input signals 2. Circuits with piecewise continuous devices Interested in obtaining transfer characteristics of these circuits or outputs for a given input signals 3. Circuits with small-signal inputs that vary around some operating point Interested in obtaining relationship between small-signal inputs and the corresponding small-signal outputs. Will assume these circuits operate linearly in some suitably small region around the operating point Other types of nonlinearities may exist and other types of analysis may be required but we will not attempt to categorize these scenarios in this course Review from Last Lecture
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Small signal operation of nonlinear circuits V IN =V M sinωt V M is small Nonlinear Circuit V IN V OUT Two methods of analyzing locally-linear circuits for small-signal excitaions will be considered, one of these is by far the most practical 1. Analysis using nonlinear models 2. Small signal analysis using locally-linearized models Review from Last Lecture
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Small signal analysis using nonlinear models     R V V t V 2L W μC V V T SS M OX DD OUT 2 sin V DD R M 1 V IN V OUT V SS Assume M 1 operating in saturation region By selecting appropriate value of V SS , M 1 will operate in the saturation region V IN =V M sinωt V M is small V IN t V M -V M   2 OX D IN SS T μC W I V -V -V 2L OUT DD D V =V -I R   2 OX OUT DD IN SS T μC W V V V -V -V R 2L    2 T SS OX DQ V V W C μ I Termed Load Line Review from Last Lecture
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Small signal analysis example V DD R M 1 V IN V OUT V SS V IN =V M sinωt     2 OX OX OUT DD SS T SS T M μC W μC W V V V V R V V R V sin t 2L L Quiescent Output ss Voltage Gain   OX v SS T μC W A V V R L  Assume M 1 operating in saturation region   2 OX OUTQ DD SS T μC W V V V V R 2L    OUT OUTQ V M V V A V sin t Note the ss voltage gain is negative since V SS +V T <0! Review from Last Lecture
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Small signal analysis example V DD R M 1 V IN V OUT V SS V IN =V M sinωt   DQ v SS T 2I R A VV Observe the small signal voltage gain is twice the Quiescent voltage across R divided by V SS +V T Can make |A V |large by making |V SS +V T |small
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EE 330 Lect 26 Spring 2011 - EE 330 Lecture 26...

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