EE 330 Lect 29 Fall 2011

EE 330 Lect 29 Fall 2011 - EE 330 Lecture 29 Small-Signal...

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EE 330 Lecture 29 Small-Signal Model Extension Comparison of MOS and BJT performance Basic amplifier architectures
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Review from Last Lecture
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over 20% of the articles on this search are now in non-English venues Some more of the 52 citing documents: Review from Last Lecture
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Engineers educated today will be under increasing pressure to be able to communicate with, supervise, work with, and work for Asian engineers that may or may not have good English communication skills and must understand the culture of engineers around the world to be effective This is not something that may happen in the future but rather is something that is already occurring and WILL become increasingly critical in the next decade Review from Last Lecture
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The increasing role Asia is playing in both the engineering field and the world’s economy is unlike anything we have seen in many decades All indicators suggest that this role will become even more significant in the future Both opportunities and expectations in the field will invariable show increased alignment with business and engineering in a global economy Understanding the culture and the environment of engineers working in Asia will offer substantial benefits for many/most engineers in the short-term and will likely be expected of many/most engineers within a decade Study Abroad Opportunities in Asia Two Opportunities in Taiwan Review from Last Lecture
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I D V DS V GS1 V GS6 V GS5 V GS4 V GS3 V GS2 Load Line Q-Point R 1 V IN (t) V OUT V DD V SS M 1 Graphical Analysis and Interpretation V GSQ =-V SS Device Model (family of curves)     2 1  OX DQ GS T DS μ C W I V -V V 2L Saturation region Linear signal swing region smaller than saturation region Modest nonlinear distortion provided saturation region operation maintained Symmetric swing about Q-point Signal swing can be maximized by judicious location of Q-point Review from Last Lecture
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Further Model Extensions Existing model does not depend upon the bulk voltage ! Observe that changing the bulk voltage will change the electric field in the channel region ! V BS V GS V DS I D I G I B (V BS small) E Changing the bulk voltage will change the thickness of the inversion layer Changing the bulk voltage will change the threshold voltage of the device   BS T0 T V V V Review from Last Lecture
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V T V T0 V BS ~ -5V   BS T0 T V V V Typical Effects of Bulk on Threshold Voltage for n-channel Device 1 - 2 0.4V 0.6V Bulk-Diffusion Generally Reverse Biased (V BS < 0 or at least less than 0.3V) for n- channel Shift in threshold voltage with bulk voltage can be substantial Often V BS =0 Review from Last Lecture
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  T T0 BS V V V     Typical Effects of Bulk on Threshold Voltage for p-channel Device 1 - 2 0.4V 0.6V Bulk-Diffusion Generally Reverse Biased (V BS > 0 or at least greater than -0.3V) for n-channel V T V T0 V BS Same functional form as for n-channel devices but V T0 is now negative and the magnitude of V T still increases with the magnitude of the reverse bias Review from Last Lecture
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EE 330 Lect 29 Fall 2011 - EE 330 Lecture 29 Small-Signal...

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