EE 330 Lect 31 Spring 2011

EE 330 Lect 31 Spring 2011 - EE 330 Lecture 31 Basic...

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Unformatted text preview: EE 330 Lecture 31 Basic amplifier architectures Basic Amplifier Structures R 1 V IN V OUT R M 1 V IN V OUT These circuits considered previously have a terminal (emitter or source) common to the input and output in the small-signal equivalent circuit Observation: Review from Last Time Basic Amplifier Structures Amplifiers using these devices generally have one terminal common and use remaining terminals as input and output Since devices are unilateral, designation of input and output terminals is uniquely determined Three different ways to designate the common terminal Source or Emitter Gate or Base Drain or Collector termed Common Source or Common Emitter termed Common Gate or Common Base termed Common Drain or Common Collector D S G B E C Small Signal Transistor Models as 3-terminal Devices Review from Last Time Basic Amplifier Structures Common Source or Common Emitter Common Gate or Common Base Common Drain or Common Collector Common Input Output Common Input Output S G D E B C G S D B E C D G S C B E MOS BJT Can analyze the BJT structures and then obtain the characteristics of The MOS structure by setting g =0 Review from Last Time Basic Amplifier Structures R 1 V IN V OUT R M 1 V IN V OUT The CE and CS amplifiers are themselves two-ports ! Review from Last Time Common Emitter Amplifier Common Source Amplifier R 1 V IN V OUT R M 1 V OUT V IN Common Emitter Amplifier Common Source Amplifier Can include or exclude R and R 1 (included here) Characterization of Basic Amplifier Structures D S G B E C Small Signal Transistor Models as 3-terminal Devices Observe that the small-signal equivalent of any 3-terminal network is a two-port Thus to characterize any of the 3 basic amplifier structures, it suffices to determine the two-port equivalent network How should the two-port characterization be done? Why is the two-port characterization useful? Review from Last Time Two-Port Characterization of 3-terminal devices D S G B E C Small Signal Transistor Models as 3-terminal Devices y 11 y 22 y 12 V 2 y 21 V 1 V 1 V 2 i 1 i 2 y-parameter characterization of 3-terminal network 1 11 1 12 2 =y +y i V V 2 21 1 22 2 =y +y i V V If unilateral, y 12 =0 y=parameters not widely used Review from Last Time Two-Port characterization of unilateral 3-terminal devices R oX V 1 i 1 v0 1 A V V 2 R iX i 2 Widely used characterization strategy Model parameters are {R iX , A V0 and R 0X } y 11 y 22 V 1 i 1 21 1 22 y y V i 2 V 2 Review from Last Time Two-Port characterization of non-unilateral 3-terminal devices R oX V 1 i 1 v0 1 A V V 2 R iX i 2 vR 2 A V Widely used characterization strategy Model parameters are {R iX , A V0 , A VR and R 0X } y 11 y 22 y 12 V 2 y 21 V 1 V 1 V 2 i 1 i 2 Review from Last Time The three basic amplifier types for both MOS and bipolar processes Common Emitter Common Base Common Collector Common Source Common Gate Common Drain How can the two-port parameters be obtained for these or any other linear two-port networks?...
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EE 330 Lect 31 Spring 2011 - EE 330 Lecture 31 Basic...

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