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EE 435 Exam 1 Spring 2009

EE 435 Exam 1 Spring 2009 - 1 EE 435 Exam 1 Spring 2009...

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1 EE 435 Name________________________ Exam 1 Spring 2009 Instructions: This is a take-home exam that is due on Friday at 10:00 in the morning. You are not to discuss any of the problems with other students or seek outside help with one exception. You may consult either of the two TAs assigned to this course. They will clarify any questions that come up and can also answer general questions about material in the course but have been asked to not help solve any of the specific problems on the exam. All problems are weighted equally. On those problems that need technology parameters, assume you are working in a 0.5u CMOS process with process with µ n C OX =100 µ A/v 2 p C OX =30 µ A/v 2 ,V TNO =0.8V, V TPO = - 0.8V, C OX = =2fF/ µ 2 , λ = 0.01v -1 , γ = 0, Cbdbot = 0.5fF/ µ 2 , and Cbdsw = 2.5fF/ µ . If model parameters other than these are used, use a set of measured parameters that are available on the MOSIS WEB site and attach a copy of the parameters you used. Problem 1 Consider the op amp architecture shown below. Assume the lengths of all devices are 2.4u, the capacitive load is 1pF, the supply voltage is 5V, the excess bias of all transistors is 250mV, and the power dissipation is 5mW. a) Analytically determine the dimensions of all devices b) Analytically determine the dc voltage gain c) Analytically determine the GB of the amplifier d) Analytically determine the SR of the amplifier e) Analytically determine the output voltage swing if the common-mode input voltage is 2V.
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