ECE 302 - Lab 5 - MOSFETS

ECE 302 - Lab 5 - MOSFETS - Camry Simpson Laboratory Report...

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Camry Simpson Laboratory Report 5: MOSFET Device Characterization 10/26/2010
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Introduction In this lab we are introduced to Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). We will collect model parameters and use them to model the device using PSPICE. From here, using both our own measurements and calculations, as well as the 4155C, we will determine the region of operation based on our values for V GS and V DS . As well, we learn the application of correct drain currents based on these regions of operation. 2.0 Prelab Using PSPICE, we constructed the following circuit and performed a 0-5V primary sweep on V DS , by 0.1V increments and a 0-5V secondary sweep on V GS , by 1V increments. From here we produced the following family of curves: 3.0 Procedure In this section of the experiment, we will gather values in order to appropriately generate the family of curves that model the devices used in later experiments. 3.1 Manual Analysis
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This note was uploaded on 01/28/2012 for the course ECE 302 taught by Professor Barlage during the Fall '07 term at N.C. State.

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ECE 302 - Lab 5 - MOSFETS - Camry Simpson Laboratory Report...

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