Homework_5(1)

# Homework_5(1) - EE506 Semiconductor Physics Homework...

This preview shows pages 1–2. Sign up to view the full content.

EE506 Semiconductor Physics Homework Assignment #5 Prof. Steve Cronin Due November 10, 2011 Scattering and Boltzmann Transport: 1.) Consider n -type Si ( n =10 17 cm -3 ) in a weak magnetic field, rotated between the (100) and (110) directions. a. Calculate the cyclotron effective masses for all carrier pockets for an arbitrary angle between (100) and (110). b. Write an expression for the Hall Coefficient ( R H ) for B along (100) and j along (001), including all carrier pockets. c. Find R H for B along (110) and j along (001), including all carrier pockets. d. Should the results of (b) and (c) be the same? 2.) The optical phonon energies of GaAs and AlAs are 36meV and 50meV, respectively, at the zone center. a. What is the occupation probability of these optical phonons at 77K and 300K? b. Estimate the relative importance of phonon absorption and phonon emission for scattering electrons in GaAs and AlAs at 100K. c.

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
This is the end of the preview. Sign up to access the rest of the document.

## This note was uploaded on 01/29/2012 for the course EE 506 at USC.

### Page1 / 4

Homework_5(1) - EE506 Semiconductor Physics Homework...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online