Class_Slides_6b

Class_Slides_6b - Semiconductor Physics EE.506 Steve Cronin...

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Steve Cronin University of Southern California Electrical Engineering - Electrophysics Semiconductor Physics EE.506
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Modifying E(k)
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3D
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Materials Selection
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E(k) in Nanostructures
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Quantum Well Si Ge Si E C E v E g = 0.66 eV E g = 1.11eV Energy band offsets: Valence Band Conduction Band Si: E g = 1.11 eV Ge: E g = 0.66 eV Quantum confinement of electrons and holes in the quantum well e - e +
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Quantum Well (Finite Potential) Solve the boundary conditions for α :
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Quantum Well (Finite Potential) • There is no analytical solution. • Must solve graphically or numerically.
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PbTe (Rocksalt) Narrow Bandgap material with carrier at the L-point in BZ m l =0.24 m t =0.024 Electrons: m l =0.33 m t =0.033 Holes:
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m l =0.24 m t =0.024 Electrons: 2 2 2 2 2 mL n E n π = In a QW, what mass do you use: PbTe
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GaAs/AlAs Quantum Well
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Subband Structure in QWs
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GaAs/AlAs Quantum Well
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Density of States
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D.O.S.
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How do the bands line up?
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MOSFET
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This note was uploaded on 01/29/2012 for the course EE 506 at USC.

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Class_Slides_6b - Semiconductor Physics EE.506 Steve Cronin...

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