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Unformatted text preview: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4448 High-speed diodes Product data sheet Supersedes data of 2002 Jan 23 2004 Aug 10 NXP Semiconductors Product data sheet High-speed diodes 1N4148; 1N4448 FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns handbook, halfpage k a • General application • Continuous reverse voltage: max. 100 V MAM246 • Repetitive peak reverse voltage: max. 100 V • Repetitive peak forward current: max. 450 mA. The diodes are type branded. Fig.1 APPLICATIONS Simplified outline (SOD27; DO-35) and symbol. • High-speed switching. DESCRIPTION MARKING The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. TYPE NUMBER MARKING CODE 1N4148 1N4148PH or 4148PH 1N4448 1N4448 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME 1N4148 − DESCRIPTION hermetically sealed glass package; axial leaded; 2 leads 1N4448 2004 Aug 10 2 VERSION SOD27 NXP Semiconductors Product data sheet High-speed diodes 1N4148; 1N4448 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 100 V VR continuous reverse voltage − 100 V IF continuous forward current − 200 mA IFRM repetitive peak forward current − 450 mA IFSM non-repetitive peak forward current t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A − 500 mW see Fig.2; note 1 square wave; Tj = 25 °C prior to surge; see Fig.4 Tamb = 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Note 1. Device mounted on an FR4 printed-circuit board; lead length 10 mm. ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS MIN. MAX. UNIT see Fig.3 1N4148 − 1 V I F = 5 mA 0.62 0.72 V IF = 100 mA IR IF = 10 mA 1N4448 − 1 V reverse current VR = 20 V; see Fig.5 25 nA VR = 20 V; Tj = 150 °C; see Fig.5 − 50 µA IR reverse current; 1N4448 VR = 20 V; Tj = 100 °C; see Fig.5 − 3 µA Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig.6 − 4 pF trr reverse recovery time when switched from IF = 10 mA to − IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 4 ns Vfr forward recovery voltage when switched from IF = 50 mA; tr = 20 ns; see Fig.8 2.5 V − THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-tp) thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth(j-a) thermal resistance from junction to ambient lead length 10 mm; note 1 350 K/W Note 1. Device mounted on a printed-circuit board without metallization pad. 2004 Aug 10 3 NXP Semiconductors Product data sheet High-speed diodes 1N4148; 1N4448 GRAPHICAL DATA mbg451 300 MBG464 600 handbook, halfpage IF (mA) IF (mA) 200 400 (1) 100 (2) (3) 200 0 0 100 Tamb (°C) 0 200 0 2 VF (V) (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 1 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2004 Aug 10 4 104 NXP Semiconductors Product data sheet High-speed diodes 1N4148; 1N4448 MGD004 mgd290 103 1.2 handbook, halfpage IR (µA) Cd (pF) 102 1.0 (1) (2) 10 0.8 1 0.6 10−1 10−2 0.4 0 100 Tj (°C) 0 200 (1) VR = 75 V; typical values. (2) VR = 20 V; typical values. Fig.6 VR (V) 20 f = 1 MHz; Tj = 25 °C. Fig.5 10 Reverse current as a function of junction temperature. 2004 Aug 10 5 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet High-speed diodes 1N4148; 1N4448 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S (1) 90% VR MGA881 input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 2004 Aug 10 6 t tp output signal NXP Semiconductors Product data sheet High-speed diodes 1N4148; 1N4448 PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads SOD27 (1) b D G1 L L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G1 max. mm 0.56 1.85 4.25 0 L min. 1 2 mm 25.4 scale Note 1. The marking band indicates the cathode. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOD27 A24 DO-35 SC-40 2004 Aug 10 7 EUROPEAN PROJECTION ISSUE DATE 97-06-09 05-12-22 NXP Semiconductors Product data sheet High-speed diodes 1N4148; 1N4448 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Aug 10 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/05/pp9 Date of release: 2004 Aug 10 Document order number: 9397 750 13541 ...
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This note was uploaded on 01/29/2012 for the course ECE 000 taught by Professor Sabaei during the Spring '11 term at Amirkabir University of Technology.

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