1ss355 - 1SS355 Diodes Switching diode 1SS355 Applications...

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1SS355 Diodes Rev.C 1/3 Switching diode 1SS355 z Applications z Dimensions (Unit : mm) z Land size figure High speed switching z Features 1) Ultra small mold type.(UMD2) 2) High reliability. z Construction Silicon epitaxial planar z Structure z Taping specification z Absolute maximum ratings (Ta=25 ° C) z Electrical characteristics ° UMD2 2.1 0.8MIN. 0.9MIN. Symbol Unit V RM V V R V I FM mA Io mA I surge mA Tj Tstg Surge current t=1s 500 Junction temperature Storage temperature 150 -55 to +150 Limits 80 100 90 225 Parameter Reverse voltage (DC) Average rectified forward current Reverse voltage (repetitive peak) Forward current Symbol Min. Typ. Max. Unit Conditions V F -- 1 . 2V I F =100mA I R 0 . 1 μ A V R =80V Ct - - 3 pF V R =0.5V , f=1MHz trr - - 4 ns V R =6V , IF=10mA , RL=100 Ω Reverse current Parameter Forward voltage Reverse recovery time Capacitance between terminals ROHM : UMD2 JEITA : SC-90/A JEDEC : S0D-323 dot (year week factory) 0.3±0.05 0.7±0.2 0.1 0.1±0.1 0.05 1.7±0.1 2.5±0.2 1.25±0.1 4.0±0.1 2.0±0.05 φ1.55±0.05 1.40±0.1 4.0±0.1 φ1.05 2.75 3.5±0.05 1.75±0.1 8.0±0.2 0.3±0.1 1.0±0.1 2.8±0.1
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1SS355 Diodes Rev.C 2/3 z Electrical characteristic curves (Ta=25 ° C) 0 10 20 30 40 50 60 70 80 90 100 900 910 920 930 940 950 IF(mA) FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mA) REVERSE CURRENT:IR(nA) IR DISPERSION MAP Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS TIME:t(ms)
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1ss355 - 1SS355 Diodes Switching diode 1SS355 Applications...

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