A04404 - July 2001 AO4404 N-Channel Enhancement Mode Field...

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Symbol V DS V GS I DM T J , T STG Symbol Typ Max 31 40 59 75 R θ JL 16 24 W Junction and Storage Temperature Range A P D °C 3 2.1 -55 to 150 T A =70°C I D Continuous Drain Current A Maximum Units Parameter T A =25°C T A =70°C 30 Maximum Junction-to-Ambient A Steady-State 8.5 7.1 60 °C/W Absolute Maximum Ratings T A =25°C unless otherwise noted V V ±12 Pulsed Drain Current B Power Dissipation T A =25°C Gate-Source Voltage Drain-Source Voltage Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t 10s R θ JA °C/W AO4404 N-Channel Enhancement Mode Field Effect Transistor July 2001 Features V DS (V) = 30V I D = 8.5A R DS(ON) < 24m (V GS = 10V) R DS(ON) < 30m (V GS = 4.5V) R DS(ON) < 48m (V GS = 2.5V) General Description The AO4404 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. SOIC-8 G S S S D D D D G D S Alpha & Omega Semiconductor, Ltd.
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AO4404 Symbol Min Typ Max Units BV DSS 30 V 1 T J =55°C 5 I GSS 100 nA V GS(th) 0.7 1 1.4 V I D(ON) 40 A 20.5 24 T J =125°C 30 36 25 30 m 40 48 m g FS 10 16 S V SD 0.71 1 V I S 4.3 A C iss 857 pF C oss 97 pF C rss 71 pF R g 1.4 Q g 9.7 nC Q gs 1.63 nC Q gd 3.1 nC t D(on) 14 ns t r 4n s t D(off) 33 ns t f 5n s t
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A04404 - July 2001 AO4404 N-Channel Enhancement Mode Field...

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