BC847 - BC846/847/848/849/850 BC846/847/848/849/850...

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©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC846/847/848/849/850 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a =25 ° C unless otherwise noted Electrical Characteristics T a =25 ° C unless otherwise noted Symbol Parameter Value Units V CBO Collector-Base Voltage : BC846 : BC847/850 : BC848/849 80 50 30 V V V V CEO Collector-Emitter Voltage : BC846 : BC847/850 : BC848/849 65 45 30 V V V V EBO Emitter-Base Voltage : BC846/847 : BC848/849/850 6 5 V V I C Collector Current (DC) 100 mA P C Collector Power Dissipation 310 mW T J Junction Temperature 150 ° C T STG Storage Temperature -65 ~ 150 ° C Symbol Parameter Test Condition Min. Typ. Max. Units I CBO Collector Cut-off Current V CB =30V, I E =0 15 nA h FE DC Current Gain V CE =5V, I C =2mA 110 800 V CE (sat) Collector-Emitter Saturation Voltage I C =10mA, I B =0.5mA I C =100mA, I B =5mA 90 200 250 600 mV mV V BE (sat) Collector-Base Saturation Voltage I C =10mA, I B =0.5mA I C =100mA, I B =5mA 700 900 mV mV V BE (on) Base-Emitter On Voltage V CE =5V, I C =2mA V CE =5V, I C =10mA 580 660 700 720 mV mV f T Current Gain Bandwidth Product V CE =5V, I C =10mA, f=100MHz 300 MHz C ob Output Capacitance V CB =10V, I E =0, f=1MHz 3.5 6 pF C ib Input Capacitance V EB =0.5V, I C =0, f=1MHz 9 pF NF Noise Figure : BC846/847/848 : BC849/850 : BC849 : BC850 V CE =5V, I C =200 µ A f=1KHz, R G =2K V CE =5V, I C =200 µ A R G =2K , f=30~15000Hz 2 1.2 1.4 1.4 10 4 4 3 dB dB dB dB BC846/847/848/849/850 Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC849, BC850 • Complement to BC856 . .. BC860 SOT-23 1. Base 2. Emitter 3. Collector 1 2 3
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This note was uploaded on 01/29/2012 for the course ECE 000 taught by Professor Sabaei during the Spring '11 term at Amirkabir University of Technology.

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BC847 - BC846/847/848/849/850 BC846/847/848/849/850...

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