Si3441DV - Si3441DV Vishay Siliconix P-Channel 2.5-V (G-S)...

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Si3441DV Vishay Siliconix Document Number: 71839 S-20211—Rev. G, 01-Apr-02 www.vishay.com 1 P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) ( W ) I D (A) b 20 0.10 @ V GS = -4.5 V -3.3 -20 0.135 @ V GS = -2.5 V -2.9 (4) S (3) G (1, 2, 5, 6) D P-Channel MOSFET TSOP-6 Top View 6 4 1 2 3 5 2.85 mm 3 mm ABSOLUTE MAXIMUM RATINGS (T A = 25 _ C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS " 8 Continuous Drain Current (T = 150 _ C) a, b T A = 25 _ C I -3.3 -2.3 Continuous Drain Current (T J = 150 T A = 70 _ C D -2.6 -1.8 A Pulsed Drain Current I DM -16 Continuous Source Current (Diode Conduction) a, b I S -1.6 -0.8 Maximum Power Dissipation a, b T A = 25 _ C P D 2.0 0.96 W T A = 70 _ C 1.28 0.6 Operating Junction and Storage Temperature Range T J , T stg -55 to 150 _ C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a t v 5 sec 50 62.5 Maximum Junction-to-Ambient Steady State R thJA 106 130 _ C/W Maximum Junction-to-Foot (Drain) Steady State R thJF 40 50 Notes a. Surface Mounted on FR4 Board.
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This note was uploaded on 01/29/2012 for the course ECE 000 taught by Professor Sabaei during the Spring '11 term at Amirkabir University of Technology.

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Si3441DV - Si3441DV Vishay Siliconix P-Channel 2.5-V (G-S)...

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