EE 230 Exam 3 Spring 2010

EE 230 Exam 3 Spring 2010 - EE 230 Exam 3 Spring 2010 NAME...

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EE 230 NAME ______________________ Exam 3 Spring 2010 Instructions: There are 8 short questions and 5 problems. The points allocated to each of the questions are as indicated. The problems are all equally weighted with an assigned weight of 16 points each. All work should be included on the exam itself. Attach additional sheets only if you run out of space on a problem. Students may bring 3 pages of notes to the exam. Calculators are permitted but can not be shared. If characteristics of MOS or Bipolar transistors are needed, assume they are characterized by the model parameters μ n C OX =100 μ A/V 2 , V Tn =1V, μ p C OX =33 μ A/V 2 , V Tp = -1V and λ =0. Correspondingly, assume all BJT transistors have model parameters J S A E = 10 -12 A , β =100, and V AF = and all diodes with parameter I S = 10 -14 A . Questions: 1. (2pts) What advantage does the precision rectifier circuit offer over the simple diode rectifier circuit? 2. (2pts) If a 12-bit ADC has V REF =5V, what is V LSB ? 3. (2pts) What terminal in the Bipolar transistor is the counterpart to the Drain terminal in the MOS transistor? 4. (3pts) Determine the ratio of the transconductance of a bipolar transistor to that of a MOS transistor at room temperature (300K) if both are biased to operate at a Q-point output current of 5mA.
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