EE 230 Lecture 30 Spring 2010

EE 230 Lecture 30 Spring 2010 - EE 230 Lecture 30 The MOS...

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EE 230 Lecture 30 The MOS Transistor
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Quiz 30 Under reverse bias, all diodes will break down. Why is the break down often destructive?
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And the number is ? 1 3 8 4 6 7 5 2 9 ?
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Quiz 30 Under reverse bias, all diodes will break down. Why is the break down often destructive? Solution: Because the power dissipation becomes too large.
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MOS Transistors n-channel p-channel • Operation very similar • Model parameters differ modestly • Direction of current flow differs Review from Last Time:
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MOS Transistors D S G D: Drain G: Gate S: Source V DS V GS I D I G G I=0 ( ) D1 G SD S I= f V ,V Model: the two-variable function f 1 is quite nonlinear Review from Last Time:
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MOS Transistors 0 50 100 150 200 250 300 012345 Vds Id
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MOS Transistors 0 50 100 150 200 250 300 012345 Vds Id () 0 1 G GS T DS D OX GS T DS GS DS GS T 2 OX GS T DS GS T DS GS T I 0V V V W I μ CV V V V V V V V L2 W μ V V V V V V V 2L T λ = ⎛⎞ =− < ⎜⎟ ⎝⎠ −• + ≥− Popular square-law model for the transistor Cutoff Triode Saturation { μ ,C OX , V T , λ ,W,L} are model parameters
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MOS Transistors 0 50 100 150 200 250 300 012345 Vds Id In most analog applications, the MOSFET is operated in the saturation region In most digital applications, the MOSFET is operated in either the cutoff or triode regions and changes between these two regions as the boolean variables change from a “0” to a “1”
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n-type resistor n-type semiconductor L W H WH L ρ R = If H is small compared to L and W, termed a thin-film resistor
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p-type resistor p-type semiconductor L W H WH L ρ R = If H is small compared to L and W, termed a thin-film resistor
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n-Channel MOSFET L EFF L W Source Drain Gate Bulk Poly n-active Gate oxide p-sub depletion region (electrically induced)
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n-Channel MOSFET Operation and Model V BS V GS V DS I D =0 I G =0 I B =0 I D I G I B “Cutoff” region of operation
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EE 230 Lecture 30 Spring 2010 - EE 230 Lecture 30 The MOS...

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