EE 230 Lecture 31 Spring 2010

EE 230 Lecture 31 Spring 2010 - EE 230 Lecture 31 THE MOS...

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EE 230 Lecture 31 THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR
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Determine I X . Assume W=100u, L=2u, V T =1V, uC OX =10 -4 A/V 2 , λ =0 Quiz 31
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And the number is ? 1 3 8 4 6 7 5 2 9 ?
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Determine I X . Assume W=100u, L=2u, V T =1V, uC OX =10 -4 A/V 2 , λ =0 () 0 1 G GS T DS D OX GS T DS GS DS GS T 2 OX GS T DS GS T DS GS T I 0V V V W I μ CV V V V V V V V L2 W μ V V V V V V V 2L T λ = ⎛⎞ =− < ⎜⎟ ⎝⎠ −• + ≥− Cutoff Triode Saturation Guess Saturation: 2 DO X G S T W I μ V 2L GS DS GS T VV VVV T ≥> Quiz 31 (solution)
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Determine I X . Assume W=100u, L=2u, V T =1V, uC OX =10 -4 A/V 2 , λ =0 Guess Saturation: () 2 DO X G S T W I μ CV V 2L =− GS DS GS T VV VVV T ≥> Quiz 31 (solution) 4 10 1 2 D 100u I2 22 u 25 D I. mA = 17 2 1 2V V V
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n-Channel MOSFET Operation and Model V BS V GS V DS I D =? I G =0 I B =0 Inversion layer disappears near drain I D I G I B (V BS small) “Saturation” region of operation Saturation first occurs when V DS =V GS -V T Review from Last Time:
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Transistor Size Comparison with 24AWG Copper Cable (Drawn to scale) State of Art transistor dimensions about 200 times smaller (lateral) than 10 μ fiber The gates of about 40000 transistors can be placed on the cross-section of this fiber (maybe only 4000 transistors) Review from Last Time:
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MOS Transistors () ( ) G GS T nO X D S D G ST D S G S T D S G 2 X GS T DS GS T DS GS T I=0 0V < V μ CW V I= V -V V V V V L2 μ V-V 1 + λ VV V V > V - V 2L ⎛⎞ −≥ ⎜⎟ ⎝⎠ 1 01 -4 2 X T varies by design A μ C1 0 V λ . V0 . 5 V t o 3 V W/L V Standard square-law model Review from Last Time:
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MOS Transistors p-channel MOSFET () ( ) G GS T pO X DS DG S T D S G S T D S G S T 2 X GS T DS GS T DS GS T I=0 0V < V μ CW V I= V -V V V V V L2 μ V-V 1 + λ VV V V < V - V 2L ⎛⎞ −− ⎜⎟ ⎝⎠ −≤ V T < 0 I D 0 V DS 0 Standard square-law model Review from Last Time:
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MOS Transistor Models simplifications G DG S T DS GS T I=0 V <V V= 0 V V D S G D S D S GS T GS T Equivalent Circuit Models Review from Last Time:
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MOS Transistor Models simplifications G DG S T DS GS T I=0 V > V V= 0 V V I D V DS Equivalent Circuit Models Review from Last Time:
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MOS Transistor Models simplifications Better Switch-level dc model
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This note was uploaded on 02/01/2012 for the course EE 230 taught by Professor Mina during the Fall '08 term at Iowa State.

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EE 230 Lecture 31 Spring 2010 - EE 230 Lecture 31 THE MOS...

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