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LMC660 Datasheet

LMC660 Datasheet - LMC660 CMOS Quad Operational Amplifier...

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LMC660 CMOS Quad Operational Amplifier General Description The LMC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It operates from +5V to +15.5V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Perfor- mance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input V OS , drift, and broadband noise as well as voltage gain into realistic loads (2 k and 600 ) are all equal to or better than widely accepted bipolar equivalents. This chip is built with National’s advanced Double-Poly Silicon-Gate CMOS process. See the LMC662 datasheet for a dual CMOS operational amplifier with these same features. Features n Rail-to-rail output swing n Specified for 2 k and 600 loads n High voltage gain: 126 dB n Low input offset voltage: 3 mV n Low offset voltage drift: 1.3 μV/˚C n Ultra low input bias current: 2 fA n Input common-mode range includes V - n Operating range from +5V to +15.5V supply n I SS = 375 μA/amplifier; independent of V + n Low distortion: 0.01% at 10 kHz n Slew rate: 1.1 V/μs Applications n High-impedance buffer or preamplifier n Precision current-to-voltage converter n Long-term integrator n Sample-and-Hold circuit n Peak detector n Medical instrumentation n Industrial controls n Automotive sensors Connection Diagram 14-Pin SOIC/MDIP 00876701 LMC660 Circuit Topology (Each Amplifier) 00876704 June 2006 LMC660 CMOS Quad Operational Amplifier © 2006 National Semiconductor Corporation DS008767 www.national.com
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Absolute Maximum Ratings (Note 3) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Differential Input Voltage ± Supply Voltage Supply Voltage 16V Output Short Circuit to V + (Note 11) Output Short Circuit to V - (Note 1) Lead Temperature (Soldering, 10 sec.) 260˚C Storage Temp. Range -65˚C to +150˚C Voltage at Input/Output Pins (V + ) + 0.3V, (V - ) - 0.3V Current at Output Pin ± 18 mA Current at Input Pin ± 5 mA Current at Power Supply Pin 35 mA Power Dissipation (Note 2) Junction Temperature 150˚C ESD tolerance (Note 8) 1000V Operating Ratings Temperature Range LMC660AI -40˚C T J +85˚C LMC660C 0˚C T J +70˚C Supply Voltage Range 4.75V to 15.5V Power Dissipation (Note 9) Thermal Resistance ( θ JA ) (Note 10) 14-Pin SOIC 115˚C/W 14-Pin MDIP 85˚C/W DC Electrical Characteristics Unless otherwise specified, all limits guaranteed for T J = 25˚C. Boldface limits apply at the temperature extremes. V + = 5V, V - = 0V, V CM = 1.5V, V O = 2.5V and R L > 1M unless otherwise specified. Parameter Conditions Typ (Note 4) LMC660AI LMC660C Units Limit Limit (Note 4) (Note 4) Input Offset Voltage 1 3 6 mV 3.3 6.3 max Input Offset Voltage 1.3 μV/˚C Average Drift Input Bias Current 0.002 pA 4 2 max Input Offset Current 0.001 pA 2 1 max Input Resistance > 1 Tera Common Mode 0V V CM 12.0V 83 70 63 dB Rejection Ratio V + = 15V 68 62 min Positive Power Supply 5V V + 15V 83 70 63 dB Rejection Ratio V O = 2.5V 68 62 min Negative Power Supply 0V V - -10V 94 84 74 dB Rejection Ratio 83 73 min
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