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LP 339 Datasheet

LP 339 Datasheet - LP339 Ultra-Low Power Quad Comparator...

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LP339 Ultra-Low Power Quad Comparator General Description The LP339 consists of four independent voltage compara- tors designed specifically to operate from a single power supply and draw typically 60 μA of power supply drain cur- rent over a wide range of power supply voltages. Operation from split supplies is also possible and the ultra-low power supply drain current is independent of the power supply volt- age. These comparators also feature a common-mode range which includes ground, even when operated from a single supply. Applications include limit comparators, simple analog-to-digital converters, pulse, square and time delay generators; VCO’s; multivibrators; high voltage logic gates. The LP339 was specifically designed to interface with the CMOS logic family. The ultra-low supply current makes the LP339 valuable in battery powered applications. Advantages n Ultra-low power supply drain suitable for battery applications n Single supply operation n Sensing at ground n Compatible with CMOS logic family n Pin-out identical to LM339 Features n Ultra-low power supply current drain (60 μA)—independent of the supply voltage (75 μW/comparator at +5 V DC ) n Low input biasing current: 3 nA n Low input offset current: ± 0.5 nA n Low input offset voltage: ± 2 mV n Input common-mode voltage includes ground n Output voltage compatible with MOS and CMOS logic n High output sink current capability (30 mA at V O =2 V DC ) n Supply Input protected against reverse voltages Schematic and Connection Diagrams Typical Applications (V + = 5.0 V DC ) DS005226-1 DS005226-2 Order Number LP339M for S.O. Package See NS Package Number M14A Order Number LP339N for Dual-In-Line Package See NS Package Number N14A Basic Comparator DS005226-3 Driving CMOS DS005226-4 August 2000 LP339 Ultra-Low Power Quad Comparator © 2000 National Semiconductor Corporation DS005226 www.national.com
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Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage 36 V DC or ± 18 V DC Differential Input Voltage ± 36 V DC Input Voltage -0.3 V DC to 36 V DC Power Dissipation (Note 2) Molded DIP 570 mW Output Short Circuit to GND (Note 3) Continuous Input Current V IN < -0.3 V DC (Note 4) 50 mA Operating Temperature Range 0˚C to +70˚C Storage Temperature Range -65˚ to +150˚C Soldering Information: Dual-In-Line Package (10 sec.) +260˚C S.O. Package: Vapor Phase (60 sec.) +215˚C Infrared (15 sec.) +220˚C See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices. Electrical Characteristics (V+=5 V DC ) (Note 5) Parameter Conditions Min Typ Max Units Input Offset Voltage T A =25˚C (Note 10) ± 2 ± 5 mV DC Input Bias Current I IN (+) or I IN (-) with the 2.5 25 nA DC Output in the Linear Range, T A =25˚C (Note 6) Input Offset Current I IN (+)-I IN (-), T A =25˚C ± 0.5 ± 5 nA DC Input Common T A =25˚C (Note 7) 0 V+-1.5 V DC Mode Voltage Range Supply Current R L =Infinite on all Comparators, T A =25˚C 60 100 μA DC Voltage Gain V O = 1 V DC to 11 V DC , 500 V/mV R L =15 k
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