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KnoblingerMOSTNoiseDeepSubMicron'01

KnoblingerMOSTNoiseDeepSubMicron'01 - IEEE JOURNAL OF...

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IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 36, NO. 5, MAY 2001 831 A New Model for Thermal Channel Noise of Deep-Submicron MOSFETS and its Application in RF-CMOS Design Gerhard Knoblinger , Member, IEEE , Peter Klein, and Marc Tiebout , Member, IEEE Abstract— In this paper, we present a simple analytical model for the thermal channel noise of deep-submicron MOS transistors including hot carrier effects. The model is verified by measure- ments and implemented in the standard BSIM3v3 SPICE model. We show that the consideration of this additional noise caused by hot carrier effects is essential for the correct simulation of the noise performance of a low noise amplifier in the gigahertz range. Index Terms— Integrated circuit modeling, integrated circuit noise, MOSFETs, MOSFET amplifiers, semiconductor device modeling, semiconductor device noise. I. I NTRODUCTION D UE TO continuous reduction of minimum channel length in CMOS technologies in the last years, CMOS has become a candidate for RF applications. For quarter and subquarter micron technologies, transit frequencies in the range of 40–70 GHz and maximum oscillation frequencies up to 40 GHz and more are possible for nMOS transistors [1]. For these devices, the classical assumption of thermal equilibrium in the calculation of the channel noise is question- able. Additionally, so-called hot carrier noise is observed for short-channel transistors [2]–[6]. The purpose of this work is to develop an analytical model for thermal channel noise of extreme short-channel transistors and the implementation in the BSIM3v3 model. With this model RF-CMOS designers are able to simulate the noise performance of their designs (e.g., low noise amplifiers (LNAs), which are an essential part of system-on-a-chip solutions for wireless com- munication), and to find the optimum between noise perfor- mance and ac performance. II. T HERMAL C HANNEL N OISE M ODEL A. Classical Models for Thermal Channel Noise In most MOS SPICE models normally used, the following equation for the spectral noise density of the drain current is implemented and widely used in noise simulations: (1) Manuscript received July 24, 2000; revised December 1, 2000. G. Knoblinger and P. Klein are with Infineon Technologies AG Germany, SIM PX1, D-81609, Munich, Germany (e-mail: [email protected]). M. Tiebout is with Infineon Technologies AG Germany, WS TI S RSC, D-81609 Munich, Germany. Publisher Item Identifier S 0018-9200(01)03027-X. is the gate transconductance, is the channel conductance, and is the bulk transconductance. In [7] the following formula is derived: (2) is the inversion layer charge, is the channel length, and is the mobility. In general, an effective mobility is used in compact models, taking into account the influence of vertical and lateral electric fields, giving (3) (4) is the lateral electric field, , is the saturation velocity, for electrons [8], is the surface mobility in the BSIM3v3 model, and in lin. region in saturation.
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