RF modeling of FET and CHAPTER 8

RF modeling of FET and CHAPTER 8 - \ FETs Vs BJT‘S...

Info iconThis preview shows pages 1–23. Sign up to view the full content.

View Full Document Right Arrow Icon
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 2
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 4
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 6
Background image of page 7

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 8
Background image of page 9

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 10
Background image of page 11

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 12
Background image of page 13

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 14
Background image of page 15

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 16
Background image of page 17

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 18
Background image of page 19

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 20
Background image of page 21

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 22
Background image of page 23
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: \ FETs Vs BJT‘S ADVANTNAQ’S WET—rE/i 'E‘MP BEva/OR ’MVIZP STABLE (fl VS 7—) @ 55m Molsé' PaQFoLM/AUCE ® )4le 2m “DEN. Fan» FEE/AMP SHEETS @ if], ls Quaommc (MO/25 L/fl/(flA/Z) 7277M} EXPO/UHUDAL COCLC—‘Zfibfl walla/UT 0F (LIT @ )5 5 H7692 77mm A BJT ~ - / @ Lg35 poWen Comsamflfiou "’3’ Emméfli; D/SADUA/u 77x 66': @ SMALLER ("mums ® Maw Dmflww“ ’FDMMcH D26 TD {+1614 27,“ ® SMMLW Powm CAPABIL/T/ES KLES. Mu) beftce Cowcam AND WE /MPROUE”ME7UTS CONWNUOUSLY AFFECT (/M/ous WANfi/Sm/é PWFDflflcha LML/L UOBUL M’ (.39) Nom—~/wsubA71§D FL/T 4/0 MUULAWs/L Me’SFt’T' ’ SCH'oT'f/CY (GA/mm“ METAL/5" / GAAS ‘7er r" ’ [/05 7 w WGH ELM-(“now Nome/717 flaws/57194 HBMT ,yHflmm 12L :9 V ‘ Vac/mag OWL/Wutr) 67$ Caz/Lain” f’Low ID ._——-.———_.————-————-~_—————u———~——————-——————————_————~——,— DEF Mom: /'IG3 FET’ VT() 0 VGS (b) Transfer characteristic I V, m V, r0 D D cs; 10 V63 2 0 Vas < 0 0 ‘ V05 (0) MESFET model (d) Output characteristic Figure 7-23 Static n-channel MESFET model. IN SATU (LAT-)0 Ummgflflo M Vb S E“ V653 "' VTO > O [e v (WW/CAL ’ 3‘: fig” “5" DWICE’ /s gy/r/r / 5W e72 AWN") /N Kgym 5", PW Wfief‘ EMU/(Mom EBVUYLSé LIA/link ‘1 G < ’ Va: C V60” V70 _.._..___.._._._—.,n___.—.._w____.'~____._.__—._ m-" ____..._.“...______..______._.._._.___————_.————-—————-—i—— I Ac Figure 7-24 Dynamic FET model. Table 7-4 SPICE modeling parameters for a MESFET Description Threshold voltage Channel-length modulation coefficient Conduction parameter Zero-bias gate-to-drain capacitance Zero-bias gate-to-source capacitance Drain resistance Source resistance """""""""""" —__——’_"——T'._—‘—_"~T"—mhww_~_fl7_ih (b) Circuit model Figure 7-25 Small-signal MESFET model. ‘ “MW” ,__,____._________________________.____.__.______..T__.___..______....___fl__._T_r____._—.____fl__ ____ w_ Figure 7-26 High-frequency FET model. L : "v m j- - g gulf; + gags 9” 3‘2 0 NELLCLTL'D (‘83 1rd; M00 AT DC. AND Lo 7? £135 and ffis OPE-70 CK‘E d Va; 9 - *1“ _ 0’1» 1?. Ci) GIVDS Q NITV Cowl/n) /: /... / 7f TL/LANS/nuu FIZEQUENCK/ G Ll) V ,.__._V _~._._._.__________..___________._._._T__._________.T_____. ______ _W__._.__._T_T__ CH 8 MATCH/Mm AIL/D gyms/m mewmks —W_wm I’D/L MAX PowE/l TXFR~>MATM 2L To Z SOURCE By non/m6, pASS/UE NW‘DMCS Bemrm LOAD flaw/MG! ==> fl/AW/Néw NcTwDflkS Acso PW$RM 077nm Was/c5 (5/9” ‘7) ‘ NINIMRE Ale/St” m/Fweyucg ‘ MAXIM/“a; Foam mum/N6, ‘ L/NEYAKRE FEEEULWCL/ fave/w; L,c up To Lou) 6H2 MUM DI SCQE‘TE COMpoNLz’TUTS SrR/P awe?) 57118 $62,770an FO/e { 05c; fflrm 67%4’17‘) Pfl/MNW GOAL S-MEE’)’ SYSTEM SPEC 'M/AJ/M/w COST (f? 0/:- etewem) S/M PL €57 Des/cw 05/ng L. pe‘rworLKs , 0’ k0 V -1, wwfl km Pl DE 5 \ if ,L T i w a _______ ,0 WT TW W? g T if (D Bea/UL: VALUE—5 ANN-Vflcfléu/ Use“ SC. A5 SKA/Maw, 7D6L~ 4 1 Q 3 O 7 3 O 8 3. 0 0.13 0.12 .‘5 Chart. —M—'—TW~—_“M~—wT—TMWMW~— Figure 8-3 Impedance effect of series and shunt connections of L and Cto a complex load in the Smith EX flaw/427721? 719 AMTew/UA M14724¢7MA gym/m DEE/6N Sou“: #1512 QmL AND ’MAMUNLV pA/L-r OF $057,147“ 5/13? 6C 1 9,2 MS *4” (:3 0,7360F gC/flw 0N / 4: SW" 6 XL;7(09.IL _> 1,6,”,14 We“) FB/L 8 TVPGS OK... 056 0‘53 kw US/NO. 5' C. SELLJLT 2° :, '73 To No/LMAL/"té MPeaD/wc:5 Z 3 , Z. +' 1k Z = BAA . 2 0'2 1‘ ’ oL A /+5 20 r10 37”: we- wlSH TO Wow To ZN: I-O/OQ. W s c W Zr. To Z”: 1732?, f- all/0 " 5672/6’5 //UDUC719/L MOUES C CU 'A/w To EN = / — a 0,7. w W WW‘WWW Wmfiflwflm - W : m w. “WWW,” MW WWW,_V WM“ b 0L 19¢ —‘ 97?. yr ,3 ‘ —- —— .. C : F 3 4) 20 (MA [DJ—J04? (val)- Jaw f - - >92 & XL. - 2A 2T1— L : é 0‘)” fl: 4) (W 0.12 0,13 . Q 75 0.39 0.38 0.37 6 Figure 8-4 Design of the two-element matching network as part of the ZYSmith Chart. égpewc Somme/d I‘M oPnMAL R)ka TRANSFC/iL @ Fwo No/aMAL/Jca) Sow/2a? AND (JD/*0 WFWCF @ m s.c. mm- wags 0F Comm RES/STANCE 6‘) AND CONDUCTAAJCL5(3)T/7$4T mas Wousé/ 777‘? fomn’ DENOWfl/é 7977; Samar W/EDA/l/CE @PLOT Cl/ZCLFS OF cousmu'r I". AND % WT PASS WflooaH 7m; Pawn“ oF‘ 77+? COMPCQ‘ Ca/Jduaxlxfl; 0F 7%; com) //7P(§fl)ALJC(-;, lDewflFV //U77:“kSEC7>aU Fb/NTS EETLQQE/U @RCLQS #9 Smps: @ AMI) , ii 0F WTWSEZTIW flaw-r5 Dmgm/NES # 0F PD5S/6LE’ L'E‘» -Z7>oxu MAW/WM Wen/MKS © Fm!) VALUES M:- womwz~a K’Encmme’j ()6) Am so SQHTAucES (b) m“: /ch77m$ Aw MAM/72345 6v WAC/W A mm ALoNéz amass WM 3002an ,bwflequ/uce 7‘0 /Wfl$(,~z7)0/U POM/7‘ AND 7)be "I‘D Co/mwx cawuawfi OF LOAD /MPe\OA/UCE. @DE‘FENLM/Ué' ACWAL VALUES @F //UDUC7DK5 Auo CAPAc/m/LQ Em A can/E?) Femuwov. [EX 8.3 2363/an ALL, pox/6M? COMP/Cnurwmfls (a)? bug/157: 7&1?» EIQMENT MATthC, MW,ng 77> MATCH" A SoquCE‘ %5:50+0l25 "ID A LOAD $1,: 23 -0LSO ASSUME 330:50 7P: 2 6716’; SWE‘PG is: “vols C615: OS~6}OJ-{ gL:O/S‘dl 8k:3+&0.8 5715‘? C9 PLoT Cl/LCLES 69) SoLtD LN 65 5 COHPWX cmwcw'm 0F LOAD F: 0-5 g: 0.8 Figure 8-5 Design of a matching network using the Smith Chart umsethons ; EA —_~ 0,3 4— 010$ 3A: 0.8—0L/ DbSHGD LINES: SOURCE F=I 23:05-90‘6 93: 061+d/ 2C: l—d//.2\ 3g: 3+0¢DIS 221): [461.2 30 23.80,: Figure 8-6 Matching networks for four different paths in the Smith Chart. UL” CANNOT £670“) 11> OKJCHU [WT/4 madam/L we H‘AVE WWW A Fb-rwwoau REA/OM """""""""" 'W‘"——_"‘“Mg—"WT—fl~*7"—‘W"""'~W~MT“T———_———-W'** 92 un stONueu Bugqmew edM-‘l Jo;suog691 ueppquozl 1-3 SJHBH "U 09:02 (mm AT Len?!” 2. Cow/cmu/mno/Usj (L) HA7“ {3 THE“ D/Wwflewce é/Mczy’ /; 66W; ° CO M Waugh)? AVA/LA (BIL I77 ' DC B/Asndé. é——-CH 9 “373481le («—w 8.3 ° Fae—DUBNCV REVSPDDSE 6"“ ’DCUS o/u 777475 NOD) COMB/NAmMS OF: 135+ C‘s C/QBAT‘E NWMKS (ELAES/va As LP] HF) BP flak/225, 4 ¥ “’3'” Z; 80 JL m 5612/55 w/ CL: ALE/F %_\S:So_/l 7;: / GI/L/a: MATCHw/a yum-ILL minus/4mm COM) 71:: 500mg mations displayed in Smith Chart Impedance transfor (a) 50 Q L = 9.75 nH C1, RS: v 2 6 pF CL OHH% (b) RS: 50 Q C LN: Resulting matching networks #PF Figure 8-8 Two design realizations of an L-type matching network. Input reflection coefficien Circuit in. Figure 8—8(b) m6 Circuit in Figure 8—8(c) O 0.5 1 15 * 2 Frequency f, GHZ (a) Frequency response of input reflection coefficient -3 -35 Circuit in -4 -4.5 Circuit in 5 / Figure 8-8(c) —5 .5 Transfer function H, dB m; 2.5 0.5 1 1.5 2 Frequency f, GHZ (b) Transfer function of the matching networks 2.5 3 #PF 8077+ NWDLDLS Have Pane PE’ZT MAW/VG» o/L/Lv é) ‘ __ / L. 7Q ,_ / 6 //% C/mlfi CAM 5g (/zeww AS fleso/uAA/ce ONO/73 41/ 7Q ease/away Heewuefi/cy, (Busing flag of: M2“: 056‘ SIMILA/UTV OF BELL Sfifi-Pw PESPDAJSE New: New. 7‘; [SPF gum LoADéQ (@J i COUUWT (IA/J G13”) BACK 77> 75¢ {V7- _ Equivalent /filter 4 Circuit in ‘ Figure 8-8(c) Transfer function H, dB LII] -6 ~ -7 —8 0.5 1 1.5 2 2.5 3 Frequency]; GHz (b) Frequency response of the matching network compared to the equivalent filter response Figure 8-10 Comparison of the frequency response of the L-type matching network and an equivalent bandpass filter. .......... ._..___...__.__________________________..1.T___._______....___T_____._t.-_._,__._._____~...__7__r____.___._..__.___.._.-_i ...
View Full Document

Page1 / 23

RF modeling of FET and CHAPTER 8 - \ FETs Vs BJT‘S...

This preview shows document pages 1 - 23. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online