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EEE4306_QUIZ__1_2012_Solution

EEE4306_QUIZ__1_2012_Solution - EEE 4306 QUIZ 1 60 Minutes...

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Unformatted text preview: EEE 4306 QUIZ 1, 60 Minutes. Open Note, Open Book, 100 Points 1/27/12 Circuit Element Values, VsuppLY = Q1 and Q21 Rx: 5K Q, R}; = Q, RC: 15 K9, R=OOQ M1: Rm = 240 KQ, R02 = 80 K9, RD: 7 K9, RL= 20009 Q3: R131 = 25 K9, R132 = 25 K9, RC1= 0 Q, RL= 20009 BJT parameters: [3 = 150, VA = 00V, base-emitter VBBON 5 0.7V, Thermal voltage, Vt = 0.025V, Name: Ari/lsde £\Q . UFID . MOSFET Parameters, VT = 1 V, k = 2mA/V2 = l/2unCox(W/L) , 9» = 0.06 VSUPPLY VSUPPLY 9% v2; E “tee M‘ i R02 RD é RG1 Cs Rs (H VOUT2 #7 ;: CS éRL VSUPPLYi £E( / 3L3kk>> Rh” £94: ’W’L V64 =g0é/L' 37/. £67 1 [3-1/- F: 1"— . / 319;— ‘1 v 5451/ Biasing Calculation: (10 points): Find the numerical values for the circuit elements below. RE and R31 SO that 153 (Of Q3): 1131 (Of M1) = RE1= 5: RSI: . VS, . _ z; I V -\/, VG5“\/7-7"1/::ED_; /(/+ 9’:,7fl R’I TM: ‘6 65 ['1 Z”, A V ’ I"! A‘ W. Eisenstadt 1 @9618: 7%: 7’” :IC ' 1"” Vim ; Wad/V _ 3% “A?” 50:25 I72. = We; : r2; 2 71. = 25% Gr. ~= Grsfirfft’fle = 37;an Midband Gain Calculation: (70 points) Assume C1, C2, C3, C4, C5, Cs and CE = 00 for this section of the quiz. These capacitors will short all signals except for DC. Use the values of RE, R5 and R32, from above. Assume all transistors are biased in the proper region of operation for good gain. Input BJT Section Gain: (25 points out of 70) Write the expression (equation) for the input section gain Vz/VSignal in terms of the circuit elements above. Use the small-Si nal lam/lawn; V2 2 1 Hr, Hgfiéei'fiafi' [91) gm [ .09 v . P h . 0' ' a / Signal 2 14.71"] E Find and report the numerical value of the input section gain. V2 2! Vault/“p. (tied/gm/km) 2 fig” i, a7;4fl_+—l§l({o+§0+25) [4 1mm 1M2 v 50 :L ~飧V/' MOS Transistor Stage 2 Gain: (20 points out of ) Write the expression (equation) for the MOS stage gain VY/Vz in terms of the circuit elements above. Use the small-signal values of VX/l; . ) QM = L .2. .L S .L. VOUT2 : __ 9MM EL- 507 B l 6’15 .OéX/m/(A, vz I 5 pm .2 /é. 7k». I Find and report the numerical value of the stage 2 gain. 6 M” = exit: 13) I V0UT2 : — LXEMA’A/ 'éfihl)2&lll//é£fij> :2. *ZmléiM/i V2 2 "(QV/L/ $2,33m4/V/ BJT Transistor Stage 2 Gain: (20 points out of 70) Write the expression (equation) for the stage 2 section gain VOUTl/VY in terms of the circuit elements above. Use the small-signal Values Of VounflXL VSignal n33 4’ RE Niel. Find and report the numerical Jalue of the stage 1 gain. T1 (2 jzl/ZkJL v3; = .m ~31 Y 2512 ‘1‘— 2.?EJLI/Zk/L W. Eisenstadt 2 Gain Comparison: (5 points out of 70). Estimate which amplifier gain magnitude is higher, the Input-Stage-to—MOS (VOUTz/VSignal) or the Input-Stage-to-BJ T (VOUTl/VSignal) and say Why? Z/Mc‘é‘ 9W€*&”Mps avufléfl943n [~éfi9)('%0) : ZéZ W 97994715793‘7’ ova/WW 3am (7zg,;:;)(1) = 651g 60% WWW/3W Jaw 0L flag/1r Maw W. Eisenstadt 3 Low Frequency Capacitance: (20 points), What value of capacitance C31 would you pick if you wanted to set up a low frequency pole at 75 Hz. Would the overall circuit (0L be close to 75 Hz if all the other capacitors are set to 15 HF? Why or why not? wa £9 = __L /C: l a] 9214’“! V ZXBM/f/i/ S wt: R) L 3277:7516 = 17r7 i '75 343k. 6 = ’ : e. 5 (PD/s '5/3/L. 7/“ F :- ' ?V C} m R; weal/[26a t’I/‘Tr§+(Q+—I) RE!» 535; we, Why/92F {g 2 S/chz 4/ J (2’ .W fi6(/,QGI1.: 7kaL>P '3ng C), ; 7;“-lzul‘: z‘ WV/S C W r £6,9f‘41- L‘jr— ='—L——' r:q‘fr/S ’5 Ron oMI+/€,_ 7) awe/5d; . . P / _‘ C15 ‘ ’e‘ +25! I, {re} 41% = 2.0997: >>g’?’/J A/Cahzu a)“: 33-7/5 9+! 2 M5 = Lt 70/; + .. max/s ~+ Jam/s + 534/qu 5 any: 57 90/5 Bonus High Frequency Cutoff, f": (5 points). For this problem, Cgs = 15pF, ng = 5pF and Cdb = OpF. Find the high frequency cutoff of the MOS Gain Stage 2, (from V2 to VOUTI): @543 Awe/2,; if; = [flnfffiozug : 73:21; W. Eisenstadt 5 ...
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