Homework 3 - ENEE 380 Fall 2011 Homework 3 (Due: October 4,...

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ENEE 380 Fall 2011 September 27, 2011 Homework 3 (Due: October 4, 2011 in class) 1. A semiconductor pn -junction is formed by doping a pure semiconductor p -type (with mobile positive charges called holes ) on one side and n -type (with mobile negative electrons ). Near the metallurgical junction, charges on one side diffuse to the other side to form the depletion region resulting in net charge densities that leads to the electrostatic fields within the semiconductor. The depletion approximation is used to estimate the electrostatic field distribution within the semiconductor. The following are the assumptions in the depletion approximation, i. On the p side of the junction   0 p xx  , the net charge density is A eN  where e is the electronic charge and A N is the density of electron acceptors. ii. On the n side of the junction   0 n x x , the net charge density is D eN where D N is the density of electron donors. iii. The charge density is zero in the bulk region
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This note was uploaded on 02/02/2012 for the course ELECTRICAL ENEE380 taught by Professor D.romeo during the Fall '11 term at Maryland.

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Homework 3 - ENEE 380 Fall 2011 Homework 3 (Due: October 4,...

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