Unformatted text preview: 3) [15 pt] a) In a PVD system the mass lost from the source is measured to be 10-4 g/s and the source initial weight is 1 g. How long will be possible to deposit from the same source before the source is used up? b) When depositing on features with high aspect ratio the step coverage is very important. Which deposition technique would you choose to obtain the maximum edge coverage? c) Compare isotropic etching to anisotropic etching for features size less that 1 μm. 4) [20 pt] a) For a simple cubic structure draw out the (1,1,1), (1,0,0) and (1,1,0) plane and find out the number of nearest atoms. b) Now, consider a face centered cubic (fcc) structure, compute the surface atoms density for the (1,0,0) plane. Consider a lattice constant of 3 Angstrom....
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- Fall '11
- Cubic crystal system, Prof. Robert Laibowitz, device microfabrication Midterm, reaction coefficient ks, vapor-phase mass-transfer coefficient