PS2-11-solution

# PS2-11-solution - 1 Homework Solution #2 MECE 4212 Problem...

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Unformatted text preview: 1 Homework Solution #2 MECE 4212 Problem #1 Bulk When the etching process cuts deeply into the substrate. Surface Process that removes sacrificial layers from beneath thin film structures leaving free standing mechanical structures. Examples: Bulk Pressure sensor diaphragm with strain sensitive piezoresistor Surface MEMS accelerometer Problem #2 (a) Plot the oxidation rate charts for wet and dry oxidation: 10 20 30 40 50 60 70 80 90 100 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Time (hr) Oxide film thickness (microns) Dry Oxidation rates - Deal-Grove model 900 1000 1100 1 2 3 4 5 6 7 8 9 10 0.5 1 1.5 2 2.5 Time (hr) Oxide film thickness (microns) Wet Oxidation rates - Deal-Grove model 920 1000 1100 (b) 100nm .1 m, dry oxidation T = C o 1000 Deal Grove Equation: ( ) + + = = 1 4 1 5 . 1 . 2 DG DG DG DG f t A B A m x ( ) ( )( ) ( ) + + = 1 165 ....
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## This note was uploaded on 02/05/2012 for the course APMAE 4200 taught by Professor R during the Fall '11 term at Columbia.

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PS2-11-solution - 1 Homework Solution #2 MECE 4212 Problem...

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