lecture-10-31

# lecture-10-31 - 10/31/2011 ME-340 Tentative class forecast...

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10/31/2011 1 ME-340 Lecture # 28 2010.10.31 Tentative class forecast Week 10/31: ch 12/14 hw ch 12 due Week 11/07: ch 14 hw ch 14 due Friday 11/11: 2nd exam 2 Reminder Problem Homework (Due We 11/2 in class) Hambley 5 th edition, Chapters 12, Problems: NMOS-PMOS transistors (2): p12.8, p12.15 Load line analysis (2): p12.17, p12.20 Bias circuits (2): p12.26, p12.33 Small signal equivalent (2): p12.41, p12.42, p12.45 Common source amplifiers (1): p12.52 3 Reminder Chapter Reading Homework Read chapter 14 Summarize each chapter in 10 lines Return it in class 4

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10/31/2011 2 Video quantum computing 5 http://www.youtube.com/watch?v=gF7rq3dbunc Review Session Weekly, ednesdays, 3-4 ETC 2.108 6 Recap last week 7 S –D “channel” Gate voltage v gs controls S- D current i D FET Operation (NMOS, n-channel) v gs > v to (threshold voltage) - Repels holes from p-region beneath gate, attracts electrons from n + regions of drain & source, forms S-D channel - v gs controls channel conductance via # of charge carriers in channel v gs > 0: induces S-D current i D = i D ( v gs , v ds ) p + , n + : heavily doped p, n: normal doping V gs =0 i D V gs > V to
10/31/2011 3 More Details on FETs FET (Field-Effect Transistor): Channel width & conductance influenced by electric field of v gs ds voltage-controlled current device: v gs controls i sd MOSFET (Metal-Oxide-Semiconductor FET) Most Popular Enhancement & Depletion types 3) JFET (Junction Field-Effect Transistors): not metal-oxide fab n-channel or p-channel 3 x 2 = 6 FET types NMOS and PMOS Transistors Today 11 Schedule: 2 nd Phase 12

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## This note was uploaded on 02/07/2012 for the course M E 340 taught by Professor Staff during the Spring '08 term at University of Texas.

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lecture-10-31 - 10/31/2011 ME-340 Tentative class forecast...

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