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Unformatted text preview: amplifier shown in Fig. P2, using the following parameters: V DD =V SS =2.5V, W n =15 m, L n =1.5 m, R D =3k Ω , R sig =500k Ω , R G =1M Ω , R L =200k Ω , C C1 =C C2 =10 F, C S =1 F, I=1mA. Tie the transistor body terminal to its source node, rather than to V SS . Note: This configuration is possible in integrated circuits that are fabricated using “triple-well technology,” which offers P-wells that are isolated from the common P-substrate (the P-substrate is always tied to V SS ). b. From the HSPICE output, find the values of V G , V D and V S at the DC bias point. c. Plot v o /v sig in dB, over a frequency range 1Hz-100MHz. Figure P2....
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This note was uploaded on 02/08/2012 for the course ECE 342 taught by Professor Nareshshanbhag during the Spring '11 term at University of Illinois, Urbana Champaign.
- Spring '11