Lecture 05 Winter 2010

Lecture 05 Winter 2010 - V t for a channel to form. The...

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1 ECSE 330 Introduction to Electronics Lecture 05: MOSFETs: Metal Oxide Semiconductor Field Effect Transistors Roni Khazaka R. Khazaka ECSE330 Introduction to Electronics MOSFET 2
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2 R. Khazaka ECSE330 Introduction to Electronics MOSFET Cross Section 3 R. Khazaka ECSE330 Introduction to Electronics MOSFET 4 n + Source (S) Drain (D) Gate (G) Body (B) p-type substrate n +
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3 R. Khazaka ECSE330 Introduction to Electronics MOSFET Paremeters 5 Parameters – Channel Length (L) – Channel Width (W) – Oxide Thickness (t OX ) – Dielectric Constant ( F OX ) – Electron Mobility ( N n ) Length Width Thickness R. Khazaka ECSE330 Introduction to Electronics Applying Potential at the Gate 6 n + Source (S) Drain (D) Gate (G) Body (B) p-type substrate n + v GS + -
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4 R. Khazaka ECSE330 Introduction to Electronics Applying Potential at the Gate 7 n + Source (S) Drain (D) Gate (G) Body (B) p-type substrate n + v GS + - Channel / Inversion Layer R. Khazaka ECSE330 Introduction to Electronics Threshold Voltage 8 The gate voltage ( v GS ) must exceed the Threshold voltage
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Unformatted text preview: V t for a channel to form. The excess voltage is referred to as the Overdrive voltage or the Effective voltage . v GS V t v OV 5 R. Khazaka ECSE330 Introduction to Electronics Charge at the Gate 9 Q = WL ox t ox v OV = C ox WL ( ) v OV C ox = ox t ox Oxide capacitance C = C ox WL Gate-to-channel capacitance R. Khazaka ECSE330 Introduction to Electronics Channel Current due to Small v DS 10 n + Source (S) Drain (D) Gate (G) Body (B) p-type substrate n + v GS +-Channel / Inversion Layer v DS +-6 R. Khazaka ECSE330 Introduction to Electronics Channel Current due to Small v DS 11 i D = n C ox W L v OV v DS i D = n C ox W L v GS V t ( ) v DS k n = n C ox k n = k n W L R. Khazaka ECSE330 Introduction to Electronics Channel as a Variable Resistor 12 g Ds = n C ox W L v OV...
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Lecture 05 Winter 2010 - V t for a channel to form. The...

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