Module 3 of Schwartz's notes

Module 3 of Schwartz's notes - Department of Electrical and...

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Department of Electrical and Computer Engineering ECSE-330 Introduction to Electronics Module 3 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) FETs 3.1 J. Schwartz, 2009 Department of Electrical and Computer Engineering ECSE-330 Introduction to Electronics ection 1 OSFET t & D C A l i Section 1 Sedra/Smith, 4.1-4.3, 4.5 MOSFET structure & DC Analysis FETs 3.2 J. Schwartz, 2009 Department of Electrical and Computer Engineering ECSE-330 Introduction to Electronics tline of Section Outline of Section 1 1 tro to MOS Field Effect Transistor (MOSFET) 1.1 Intro to MOS Field Effect Transistor (MOSFET) 1.2 NMOS FET 1.3 PMOS FET 1.4 DC Analysis of MOSFET Circuits FETs 3.3 J. Schwartz, 2009 Department of Electrical and Computer Engineering ECSE-330 Introduction to Electronics ecall: The p rpose of a transistor Recall: The purpose of a transistor ree rminal device to implement A three terminal device to implement current switches and amplifiers. – voltage control terminal to control g current flow through other two terminals i d t Requires dependent sources. • A small control voltage can allow a rge change in current large change in current. FETs 3.4 J. Schwartz, 2009
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Department of Electrical and Computer Engineering ECSE-330 Introduction to Electronics asic Characteristics of the MOSFET Basic Characteristics of the MOSFET Two flavors: nMOS and pMOS (like npn, pnp in a BJT) BJTs generally have better performance (more predictable small Can also be “enhancement” or “depletion” types (we will only study enhancement-types in this course) signal parameters). Modern digital very-large-scale- integrated (VLSI) circuits employ The MOSFET is usually smaller than the BJT. – It consumes less power. MOSFETs almost exclusively. Analog applications use BJTs only when top performance is absolutely sential – It has a much smaller transconductance, g m , because of its small cross-sectional area. essential. Massive integration techniques for digital applications. FETs 3.5 J. Schwartz, 2009 Department of Electrical and Computer Engineering ECSE-330 Introduction to Electronics MOS Circ it S mbol nMOS Circuit Symbol • A MOSFET is in fact a • Simplified symbol ith implicit Body four-terminal device • “Body” terminal always iased at ost negative with implicit Body terminal connection rrow indicates biased at most negative potential Arrow indicates direction of current DRAIN DRAIN GATE GATE FETs 3.6 J. Schwartz, 2009 SOURCE SOURCE BODY is connected to most negative DC voltage in circuit Department of Electrical and Computer Engineering ECSE-330 Introduction to Electronics MOS Circ it S mbol pMOS Circuit Symbol •B o d y terminal always • Simplified symbol with y y biased at most positive potential implicit Body terminal connection Arrow indicates direction of current flow SOURCE OURCE GATE GATE SOURCE FETs 3.7 J. Schwartz, 2009 DRAIN DRAIN BODY is connected to most positive DC voltage in circuit Department of Electrical and Computer Engineering ECSE-330 Introduction to Electronics he n
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Module 3 of Schwartz's notes - Department of Electrical and...

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