Hwk4 - 11 and the h-parameter h 21 . 810) The box in the...

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Vcc R1 R2 Rc Re Vcc v s R S (or R S ) v s ECE 255 ELECTRONIC ANALYSIS AND DESIGN Fall 2011 Homework 4 Due Monday, October 17 5:00 p.m. MSEE 180 Drop Box 1) Text problem 13.65, page 849. Compute A Vs (use 1 38.92V T q k - = ) 2) Text problem 13.66, page 849. Calculate worst-case voltage gain, i.e. the minimum value of |A Vs | for 50 β 0 100 for the circuit in Problem 1. 3) Design a four resistor bias network to achieve the operating point given in Text problem 13.65 with the following restrictions, R th = R B , R C = R C , and V CC = 20 V. Assume V BE = V 0 = 0.7V. 4) Text problem 13.67, page 849. Compute A Vs 5) Text problem 13.68, page 849. Compute A Vs 6) Text problem 13.69, page 849. Compute A Vs (or R 1 )
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7) Any linear 2-port circuit can be characterized by the following pair of equations: V 1 = h 11 I 1 + h 12 V 2 I 2 = h 21 I 1 + h 22 V 2 For the circuit shown above determine the h-parameter h
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Unformatted text preview: 11 and the h-parameter h 21 . 810) The box in the circuit below contains an FET. Using the information provided for each FET in the problems below select all component values to achieve the specified operating points. Vg Rg Vdd Rd 8) The device is an n-channel JFET with I DSS = 25 mA and |V P | = 4 V. The desired operating point is to be I D = 16 mA and V DS = 5 V. 9) The device is a p-channel depletion-mode MOSFET with |I DSS | = 30 mA and |V P | = 4 V. The desired operating point is to be |I D | = 7.5 mA and |V DS | = 8 V. 10) The device is an n-channel enhancement-mode MOSFET with |V T | = 3 V and a known operating point in the Beyond-Pinch-Off region at I D = 10 mA when V GS = 5 V. The desired operating point is to be I D = 20 mA and V DS = 10 V....
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Hwk4 - 11 and the h-parameter h 21 . 810) The box in the...

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