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Unformatted text preview: 11 and the h-parameter h 21 . 8–10) The box in the circuit below contains an FET. Using the information provided for each FET in the problems below select all component values to achieve the specified operating points. Vg Rg Vdd Rd 8) The device is an n-channel JFET with I DSS = 25 mA and |V P | = 4 V. The desired operating point is to be I D = 16 mA and V DS = 5 V. 9) The device is a p-channel depletion-mode MOSFET with |I DSS | = 30 mA and |V P | = 4 V. The desired operating point is to be |I D | = 7.5 mA and |V DS | = 8 V. 10) The device is an n-channel enhancement-mode MOSFET with |V T | = 3 V and a known operating point in the Beyond-Pinch-Off region at I D = 10 mA when V GS = 5 V. The desired operating point is to be I D = 20 mA and V DS = 10 V....
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This note was uploaded on 02/12/2012 for the course ECE 255 taught by Professor Staff during the Fall '08 term at Purdue.
- Fall '08