# Hwk6 - ECE 255 ELECTRONIC ANALYSIS AND DESIGN Fall 2011...

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T1 2 kohm Vdd = -16 V 100 kohm Vdd = -16 V 500 kohm 4.7 kohm Vdd = 24V 2.7 kohm T1 270 kohm 270 kohm Vdd = 24V 2 kohm Vdd = 20V 500 ohms T1 1 Mohm 4 Mohm Vdd = 20V ECE 255 ELECTRONIC ANALYSIS AND DESIGN Fall 2011 Homework 6 Due: Monday, November 14 5:00 p.m. MSEE 180 Drop Box 1) An FET in an electronic kit is to be biased as in the circuit shown with the specified component values. The FET is characterized by T V 3 V = , 9 mA K = , and a Beyond-Pinch-Off characteristic given by 2 GS D T V I 1 V K = - . Find I D and V DS at the planned operating point. 2) In constructing the kit discussed in Problem 1, the upper end of the bias resistor, R 1 , (the end that should be connected to V DD ), is mistakenly connected to the drain of the FET instead of the voltage source, V DD . Find the operating point. 3) Let V DD = -16 V and R 1 = 500 k in the bias circuit shown. The MOSFET is described by the nonlinear relationship 2 GS D V I 30 1 mA 3 = - + . Find I D and V DS .

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