2n5088 - 2N5083 (smcom 2N5089 Semiconductors BOX 589...

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Unformatted text preview: 2N5083 (smcom 2N5089 Semiconductors BOX 589 PHOENIXARIZCJNA 350131 MOTOROLA CASE 29 (I) NPN silicon annular transistors designed for (TO-92) low-level, low—noise amplifier applications. MAXIMUM RATINGS Collector-Emitter Voltage VCE 0 VEB Collector Current Total Device Dissipation @TA = 25°C 310 mW Derate above 25°C 2. 81 mW/°C Operating and Storage Junction TJ, TSt -55 to +135 °C Temperature Range g THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction SJA 0. 35'? ° C/mW to Ambient If. NOISE FIGURE ldfll 2N5088, 2N5089 MOTOROLA Semiconductor Products Inc. ® ELECTRICAL CHARACTERISTICS (T. = 25'C unress mnemise noted) sva “mm OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1C _ 1.0 mAdC, IE = 0] 2115033 50 _ ZNSDBB 25 Collector—Base Breakdown Voltage BVCBD Vdc [1C '- 100 “Ade, [E = 0) 2N5088 35 ZNSOSI‘I 30 Collector Cutoff Current {CEO {VCR = 20 Vdc, IE = 0] 2N5088 (VCB = 15 Vdc. IE = 0} 2515089 Emitter Cutoff Current IVEBIOH} = 3.0 Vdc, IC = D) = 4.5 We. Ic = 0} DC Current Gain {IC = 100 “Ada, V = 5.0 V'ch 2N5033 CE 2N5089 (1 =1.0 mAdc. v = 5.0 Vdc) 2115033 C CE ansoaa {rc = 10 main, vc = 5.0 Vdc) msoas 2115089 Base-Emitter On Voltage [IC = 10 made. VCE = 5.0 Vdc} DYNAMIC CHARACTERISTICS Current-Gain — Bandwidth Product {10 = 500 ufidc. VCE = 5.0 Vdc, I: 20 MHz Collector-Base Capacitance [VCB = 5.0 Vdc. [E = 0. I = 100 kHz. emitter guarded) Emitter-Base Capacitance {VBE = 0.5 Vdc. IC = O. f = 100 kHz, collector gum-dad) Small-Signal Current Gain {1c =1. 0 mAdc. VCE = 5. D Vdc, f = 1.0 kHz) ZNSOSB 2115089 Noise Figure {I = 100 undo, VCE = 5.0 Vole, R =10 k ohms, ZNSOBS C s r: 10 Hz L015.? kHz 2N5039 NOISE FIGURE v“ = 5.0 we, T. = 25 'c FIGURE 1 — FREBIJENW EFFECTS FIGUIIE 2 — SOURCE RESISTINBE EFFECTS IEIEHIIIIIIIIIIII IIIIlIIIIIIIIIIIIIIIIIIIIIIIIIIII J L- - ‘1 - I - _= 8.0 . .- n'w. II IIIIII ' Ill}! I'll. II Illlll ,fllllllillll unnununnnn _ mmmmu Illllléfiflfilll IIII _ IIIIIIIimIInQIIIIgamma" mmm.:!IIII-.::::::I!III nu IIIIII lIiE!ll|!!!!a.lllll!!flll IIIIIIIIIIIE!!!IIII!IIIII_ ' IIIIIWIIIEI!!!!!E§F£ "- "I- o IIIIIIIIII:==::=::IIII==E:E::IIII u IIIIIIIIIIIIIIIIIIIIIIIIII-EEIIII A - ------ II I “II-IIIIIIIIII'IIIIII I .I I v 94min“ nnr n1 nnfl‘) n: In flfl in In 1n n1 11'} [11 RI ‘H In an :n I'fl WI 1“ fill IM CNMIUEIIISTICS RELATIVE ‘m mm :1 I. ._ 1 ma . h PARAMETERS 2N5088, 2N5°89 (continued) 1.1;. = 10 Vdc. 1 = 1.0 Iii-12.1.1 - 25°C (For figures 3. 4. 5. 6. B) This group of graphs itlustrates the relationship of the "h" parameters for this series of transistors. To obtain these curves. 4 units were selected and identified by number — the same units were used to develop cuwes on each graph. Mill! 3 — 1110111 IIII’EDILIICE FIGIIIIE 4 — WLTIGE FEEIJBABK HT"! 50 ----—--IIII_-----IIIII II 6" II 2 12' z 5 3 E g e K I : 3 i Q g 3.0 “g é. I =3 1.0 0:5 —---- 0.1 02 0.3 0.5 0.2 1.0 2.0 30 5.01.11 10 ' 0.1 0.2 0.3 0.5 0.2 1.0 2.0 3.0 5.0 2.0 10 1:. 001120100 CURRENT mu 1:. 0011201013 01112132111 [ml] 5 WI! 5 — CURRENT Bill FIGURE 5 — OUTPUT IDMFIHNBE 2000 m _--------II_---- 2m ---I--IIIII- I- 1000 €100 20 E 1w 3 a .3: 510 _ 500 1: E ’5: E W 0. ‘IIII!!! _ 2° 5 --II5fl E 3 10 13 1.0 5.0 3.0 0.1 0.2 0.3 0.5 0.1 1.0 2.0 3.0 5.0 10 0.1 0.2 03 0.5 0.1 1.0 2.0 3.0 50 1.0 10 1011011031011 0111112111 1mm 1‘; 0111201011 01mm 01110 FRUIE 1— EFFECT OF VIIIJIEE FIGURE 8- DEI'EIIIIIIIT E I E ' ==- -- .. 0.2 a 1: n =0 0.5 .- E El 5 -- n- -_-l .5 Ell 7 III . 1 =5: €001 4: ‘3 "05 - i || :5 0.03 0.02 0.1 0.2 0.3 0.5 0.2 1.0 2.0 3.0 50 1.0 10 11a. common-Emma: 1101.12.02 mus: - 1;. 0011012101: 0011013111110: ® MOTOROLA Semiconductor Plus-ducts Inc. ch CflLECTDR-EIITTER VOLTlfi-E M115! lc, ammo: CURRENT [all] FIGURE ID — ROLLEUIJI Sl'l’lllllflfll REIIII ic. WLLEC'IDR CURRENT L111” REVERSE WURGE MUS} [2 ELEI ...
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This note was uploaded on 02/13/2012 for the course ECE 255 taught by Professor Staff during the Spring '08 term at Purdue University.

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2n5088 - 2N5083 (smcom 2N5089 Semiconductors BOX 589...

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