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Additions to Ch 2 1. After section 2.2.5 S 2.4 Estimate the operating points on Fig. 2.10a if V DD = 4 V. (a) R D = 2 KΩ, V GS = 4V, (b) R D = 2 KΩ, V GS = 3V (c) R D = 8 KΩ, V GS = 4V Answers: ~900 µA, ~2.2 V; ~500 µA, ~3 V; ~400 µA, ~0.7 V 2. After section 2.3.1 S 2.5 Calculate I D if an n-MOSFET has V A = -20, K n = 200 µA/V 2 , V tn = 1. (a) V DS = 4 V and V GS =2 V (b) V DS = 1 V and V GS =3.5 V (c) V DS = 8 V and V GS =3 V Answers: 240 µA; 840 µA; 1.12 mA S 2.6 Calculate I D if an p-MOSFET has V A = 20, K n = -200 µA/V 2 , V tn = -1. (a) V DS = -3 V and V GS = -2 V (b) V DS = -2 V and V GS = -2 V (c) V DS = -6 V and V GS = -3 V Answers: -360 µA; -340 µA; -1.68 mA 3. After section 2.4.2 re-number S problems to 7-8-9 4. Befor section 2.6 re-number S problems to 10-11-12 Add section 2.7 at end of chapter. 2.7 Summary of FET Operation The correct choice of equations and operating region are critical to the analysis and design of amplifiers and digital logic gates using FETs. Below are tables and graphs to help the reader bring the subject into focus. Table 2-1 shows the values of the parameters used in the previous equations.

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