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E1sol

# E1sol - 1 What is the v e voltage measured between...

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Unformatted text preview: 1) What is the v . - e voltage measured between terminals A and B? (a) 1 V; @s .33V; 0) 6.67V; (d) 7.5V; (e) 10 v +_. In (it); 10 10v—- 9 (050mm 3333 A 1K 1K 5'00 1. 2) What is the Thevenin equivalent resistance seen between terminals A and B in the circuit above? +01"L Surplces mic sin «T5 1 l o R - .033 KQ; (b) 0.5 K9; (0) 1.0 KS2; (d) 1.5 K9; (e) 3K9 ' _ i 15 “E l" J 3) What IS the Thevenin equivalent impedance between terminals A and B for the circuit below? (a)z,.=R (mam/gm (c)Z,-,,=R+11g,,,.z,.=RIIgi 0an change 5v, results in Current. .. V- M A -Zm- L-___..-. + Mfg 1‘. M M m ’5 %+—: 1: L 3m \\ v1 R QmV1 .. l "" - :1; :R\ 30: R J” B ' 3m 4) What is the current, [9, through the diode in the circuit below? You may use a model with V7 = 0.60 V and rf= 0 £2. (a) 0.00 mA; (b) 2.5 mA 8 mA; (d) 4.4 M; (e) 5.0 mA 1K 5) A silicon diode has 5 mA ﬂowing through it in the direction shown. What is the most likely value for V9? (Assume room temperature) (a) +0.10V (b) -0.10 V (c) +0.75V (d) -0.7SV.-55.0V 'For Hus much curren'i’ Wus'i be In amiamclie MEMO ' 5 mA Wt‘ii‘ Myth“ poian‘i‘oa, (3° 125:0??? vine ‘— +.VD - 6) A silicon diode has 5 mA ﬂowing through it in the direction shown. What is the small- signal ac resistance of this diode? (Assume room temperature and n = 1) (a) 0.09.59 (c) 129 (d) 429 (e) 1209 Nr : \h— _, .022: s 52 s5” 5mA, ITrK rt “M —>r— nejllﬁtlpie + VD ' 7") Identify the transistor shown below. Q-channel enhancement mode MOSFET; (b) n—channel depletion mode MOSFET; P -channel enhancement mode MOSFET; (d) p—channel depletion mode MOSFET; (e) n—channel JF ET; 8) Identify the operating region for the transistor shown below. (Assume IVTI = 2V) (a) cutoff; (b) ohmic; (c) turation; (d) forward bias; (6) reverse bias \ ngz: N scientist! (“5* be >2V‘l’of1nch), + [I '- + VnzN V6. 9" U V plucﬁeﬂ +4| VDS = '10V ole Wehéﬂpue MJf 357’ 31") /Sah4ro2ie§ V93 = 1V _ ' , W sass W\ 9) If a p-channel transistor with V11, = -2V gives I D = 4.0mA when VGS = V93 = -4V, what is Icp? (a) 0.1mAN2; (b) 0.25 mANZ; (c) 0.50 mm; .0 mA/VQ; (e) 4.0 W; V0.57- "'"N Nil— 11‘6193 (simmered Merge V60: VGSi-VSD ”channel :50an 7'- VQS‘V'US 3 "i" (”'0 30 vacirteg F 10) The diode below has IS = 10'9 A andn = l. The voltage V2 is 10 volts. The voltage V; is: (a)-10.0 v (b) 0419 v (0) 0.0V T—F ‘12 [S 10 UoH'S ,curreni‘ 'Fiowlﬂﬂ in am reader is Wm? ,sotxtbé, 00099 eiuaiion 3mg 00“an v17 1' rug) 2 VAN-[Sin (gas) :im'i 00‘ on? ﬁlm [5 C lose 11) The diode in the circuit below is the same as in Prob. 10. The voltage V2 across the 100 Megohm resistor is: .00 mV (b) -26 mV (c) 0.0 V (d) 261;“; (e) 100 V 3’ _ _ \[2 - {L‘s tooxxo = .IV 100 V . 100 MT}, (reverSe Sofi'urq'i‘lon Cuffed” “90135) + 12) The zener diode has Vz = 9.0 volts and rz = 0.0. The current IL =: (a)0mA @mA (0)5mA (d)9mA (e)11mA 13) The resistors were changed but the zener diode is the same as in Prob. 12. The new value of IL is: (a)0mA (b)3n1A @SmA (d)9mA (e)11mA 011062 15 mwﬁqew :trcm‘t becmse reakﬂadn uoHn {2 has 36(- ﬁeem ejuwassetg (c) 0,222+ (5. mV)cos(40l_ + 45°)(d) 0.4 9 + (2.6 mV)cos(400t — 45°) @mw + (2.. mV)c. 'l- ______-_______-____..________________JZ___________________________________________________________________ 15) The MOSFET has kn = 2 mAfV2 and Vt}, = 3 volts. V; = 6 volts and V2 = 2 volts. ID = : (a) 2111A (b) 6mA @6mA (d) 18mA (e) 32mA See 01th r8310 n 103:: ID: z[1(3)Z—ﬂ:l£mﬂ : kn [Z(UGS"VTB)V9§ " V93] 16) The MOSFET is the same as in Prob. 15. V; = 0 V, V2 = 2 V and V3 = 4 V. ID=: (b) 6111A (c) 16mA (d) 18mA (6)32111A In Efo [gd’ufaj‘m fejIOn 986+ 1 MR To 3‘ 2 [1'3] 17‘76 3 K131651015? Source not ‘21ch Axel“ Ethcherﬂ 17) TheMOSFEThask =2mAN2and Vm=—3volts. V1: 6Vand V2= 10V. ID=: (3) 0111A ‘mA (c) 6111A (d) 16mA (e) lSmA 18) The depletion mode MOSFET has kn= 2 mAsz and V17, = —— 3 volts. V 1 = 10 volts and V2 = 10 volts. ID=: (21) 0mA (b) 2111A (c) 6111A WO/Ss‘lum‘l'aﬂ 2. ID = lﬁ-h [V05 ”Vol 3 at 0—4:]2 :18 «~19‘ 19) Choose the correct SPICE statement for the voltage source: (a)V430DC12 (b) V436DC12 _ V403AC-12/ @V463D12 5:2»: of? e V4 6 D —12 «FF % _13 15710 'P‘Stlwe Side DC 20) V1(t) = 50 sin (2a: 100 t) volts. R = 50 ohms. Assume the diode is ideal and only conducts for a small part of the period. If the dc voltage across the resistor is to drop only about 2 volts over the period (ripple voltage is about 2), a suitable value for C is about: (a) 50 HF (b) 500 uF @000 pF (d) 50,000 0F (e) 500,000 MF 8 EE-255 Formula Sheet: Exam 1 Data: At 25 °C (R. T.) VT = kT/q =0.026 volts k=1.3806X10*23JfK = 8.618x10’5 cw K q=1.6022><10_]9 C 0°C: 2?3.16K Formulas: ex =1+x+x2/2 +--- Diodes: ID = 14.9““? —1) VD = V? +199 C}. = qn(1+ Vie/VI”. )‘1”2 V rd = ‘32 = —T (forward bias) VD = VD + va, dID Q 09 Rectiﬁers: T V = V —P- f “[RC) . . . L Monolithic Resmtors: R = RS(I—V) n-channel MOSFETs: ID = k” [20/03 — V”) Vm — V35] (olunicftriode) ID = kﬂ[ V03 ._ Vﬁf (saturation) V05 > Km (NOT cut-off) V03 > V03 — V” (saturation) p-channel MOSFETS: ID = kp[2(rgs — VHWDS - V35] (ohmicftnode) ID = kp[2(VSG + 1991/50 — IQ] (ohmicftriode) ID = kP[VGS — me (saturation) ID = kP[I§G + VH1]2 (saturation) V65 < V1W1 (NOT cut-oft) VSG > —Vm (NOT cut-0ft) Vm < V63 — V” (saturation) V59 > VSG + V”. (saturation) MOSFETS: ra:—I=I_A VTh:K‘kO+Y[m#\/Tw:l ...
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