mosfet - Drain Field oxide(Sum bias(a(h Consider ‘Hlé...

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Unformatted text preview: Drain Field oxide (Sum bias) (a) (h) Consider ‘Hlé Siruc‘l'ure above. Vqs > VThm‘IOIJ:—\[;.— —- :ng-I— fgsrhve J charge on H19 3d“! aHradS e‘echrons +0 make an n-ckanne[ befiueen +‘ne Source anal drain m fins 0- ckdnhe‘ MOSFET atrerahnj m enhancemen‘f Neale. The sjmbdpfinr The n-chagnel euka'nCQWIen'i‘ mode MOSFET 16 efiher G or G The June oPenfies {In one of 3 rejmns: To Jefermme JrLe mile of o emf‘o": asks]? H” some 02H we) TM“) 0? no‘T, fluff l5) ‘Fof enhncememf Mac/‘9 MOSFETS) IS V654 VT Jo'r ho '5' {HBO askfIS -Hne Amtn (NJH suite) 13W»!er or “0-1-1 “Wt. ls) {tor eh‘naaceuefi male MOSHETS2 \S Van 4V1.) of mi? A [S {h I‘F one Stale IS ’ch‘neaq) owl We o'Hler 1.5 {101‘} HA; flljawe ls 1590 or qufurajfeci Male. Jcm‘kl’l Slates are 'EthCL‘e} dk Dale of Ohm ’dner 52,? t9 WWI HA8 JEN/‘59 15 m N f I (ii-dog» “Cl ff 1 V A em“ F6510“. In jettem‘} V45 {5 AflerenT {mm DS}So 9T “3 6n fie lom‘hoh along we (“in L} {he cma “imam: [My luff arts: v Jefehdihfl on whether +ke VoHafle between {Jne flite a; ’{Jom (ions (3 “n9 [5 .l. v05} ) VT}! 2V7 Channef inversion V051 charge De lotion p Channel inversion charge (a) (b) Channel “$112310” Channel ge inversion charge Saturation region “.03 (‘30 v05 v5.5 (sat) 1; 55 (C) (a) a) flc‘fure of chanhe‘ when Ups 15 we? QWH am? Vqs> V1- 50 +le+ Skirt: + v zVas m“ “>1. c U EvCowes (EH? ‘6? er So qp , b 21;? filial 2:656 (ft 30% encls 3% Aeulce. (ohrghde) .. chnm‘ 4+ 0 \ 9 \1 So fkfl‘ \LsD-VT a“; C) (1? tl‘ife 53:18; +zv;l::( '21:: “533162) chum/“fuck <1“; W's‘dumfi‘l) off 0‘3 [Flame w‘ieh \Ios beames even ‘arger So 1+3 UepéV-r an} ckannel 51mm .9 'ftnokeél 09;, (fig .QaJtura’feJ) I“ +11er L'th re‘j‘an (.9 : kn [2 N45“ VT) V95 " V025] I n Sanufa'hon/B‘PO real-on 'Lp 7- kn EV“- VT)?- In (Jeff L9 3;- 0 lift: \JJ’U'hCOX Cox 3 (MA? coffiocllfauce 139x unit area qt ‘- ‘ ‘* - a "St {(9 2L 2 EL” 1 a)": “ANNEX [0: )F%m - giiufiwy n box {:0}: 15 oxde 'chkfleg$ l 111:: [[051er o‘f dean)” {“ mufls‘w “Yer 1303(531): 5'63 — VT}! . I v > V hfiq I 635 654 o mu. / u 1 I BFO Serf magptm > van V f ' "653 > "032 f; I "G32 > V031 / // x _ " “031 > VT}. > U _ Z (M . / / / - / “(J-hm {116+ fix— JAqe n—chmitek AeUlce *0 aeratoffe Un mock, V53 must be >VT1+WlS, must be Tosd'wé enougk in; {arm a chnnel. 1* t5 EJoSSIHe‘howeverl 1“, (Life H19 C 6mm" C: 1+ QXISTS unless \IGS IS Wattle [waive enough "h: {7i em‘mncewefif IJf war This IS CaH'eA ofercfilov lh cieflelnon moJe. TLE’ g m J ‘ForJfil-ckanneé Jefle‘hofl mqgc (iewce [S G or G 2. p 7-" I955 3 ‘Fof V95 3 VQS‘V? ‘fl anal 5 \(GS 5' O fi-l- is! Source [16+ Tttha! Vlfidfiecl Araln fife-Source Sq+ura+10n curred" V65 5 Beyund~pinch-aff or sanitation region V1): {V3 is 8 i0 £2 [4 (.u’faf? Agog hare Enhancemeni Mode Deweticn Mode 'meTtow MODE V95 VEUICE ((Em a‘wowafe m enhance Mild mole.) _'_'_'—'—-—-—-_ H1? ALL \Jomae ?0LHR1TIES (afor- VP.Vr,FloJrs> REVERSE DIRECTlONS 036 QRROQS IN 011cm SVMBoLS Fm 11W mfiML 1N ?H\[8\CRL DEVlCES GET ’V“CHHNNEL DBMCES THQT COWE‘SFOW TO h-cRPrNNEL DEMES assume NT\"2V luflz‘w Enhancementqu «1 k— channel ‘ 0' Chm‘ Mos PETS X ...
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mosfet - Drain Field oxide(Sum bias(a(h Consider ‘Hlé...

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