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t3sol - (1 What 3 terminal device is represented most...

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Unformatted text preview: (1) What 3 terminal device is represented most closely by the figure below? (b) NPN BJT (c) N—MOSFET (d) P-MOSFET (e) IFET (2) What is 1C when RC = 21:52, R3 2 100/43, R5 = 5m, VBEW) -= 0.7V, Bdc = 100, and C1 is ' large? - 5—.7 - 5 IBK3+VBE+Ieflezfi IC" 5'95 " .7l07mfi‘ ¥§R6+ «7+ igl‘e? ‘5 Ic+7*' firms-5‘ [email protected] (b) -.116 111A (c) 1.53 mA @100 m (e) 4.09 mA (3) What is VCE using the figure and values from Problem 2? - .50 V (b) -001 V (c) 0.7 V (d) 3.2 V (e) 2.2 V 5= He + ”cs +1525: -5 R” L2 4:- We a: It, (2323‘ V 1": '7'°7(2‘)*VCE* mo? 05395 '3? ca : ‘lfl‘i ‘° = WW We; «- 3.5m (4) What type of device is used in the circuit shown in Problem 2? .VPN BJT (b) PNP BIT (c) N-MOSFET (d) P—MOSFET (e) JFET (5) What is the correct small—signal model at middle frequencies for the figure shown in Problem (2)? (6) What is [C for the following circuit when R1 = 20kg, R2 = 30kg, R}; = 1.5142, Bdc : 25, R33 ”‘—" 0, VT 2 0.026V, VBE(on) = 0.7V, and n x 1? 3 ." IZI5+ girl-Egg) 2-3-7 [Us + (l-S)(¥+I)I'B I = 2'3 g I = Z; 2'3 V 5 [2+ ((35 526 6 I'2, 4.: (1.921,, = (.127 .113 mA (b) 1.47 mA (0) 0.46 mA ((1) 11.5 mA (e) 1.53 mA (7) The values of R1 and R2 of Problem 6 change so that VCE = 1.1V. The other parameters do not change. What 13 rat? .60 n (b) ([3250 o (c) 464 o (d) 1.5 kg (e) Not Enough remember) _ =_:§£-L “1534; ' (1"0253 5=UCE*’IE?£ Informanon '" 5:1.1+Istr; “:- £145.: .mmrzem Kev—— 3&C:$o 2-5 ‘B/ .E‘ I 2g R e: . Ill (8) What type of amplifier is shown in problem 6? J.Common Collector (b) Common Base (0) Common Emitter (d) Common Source (e) Common Drain (9) What type of amplifier corresponds to the small—signal model shown? .Common Collector (b) Common Base (0) Common Emitter (d) Common Source (6) Common Drain (10) What is the output impedance for the circuit of Problem 9 when ICQ 2 0.5mA, B = 25, VT 2 0.026V, R1; 20kg, RE 2 21:9, and n. 2 1? .189 Q- ‘ (b) 50.7 9 (c) 10.0 k9 (d) 6.8 kg (6) 52.0 £2 ll J, __ _. __t__ __b l__.. )— :' - ,uhlttellsm .. inf . _.__ *4 ”Why!“ . M7 .omsk. Liam (11) -What is the gain (Avg = vo/vs) for the circuit of Problem 9 when ICQ = 0.5mA, B : 25, VT 2 0.026V, R1: 20kg, RE— - 2169 and n— — l? @0976 (b) 38 I (c) 0.940 (d) 53 (6) none ‘1; 1‘ mer = YE?“ W" V: Va :5 V5 ;—y——° +3... (Us-v.):‘-I£ RE 93:— E'E 0+3". r11} 11' I: PF+(‘+3mrtr)EE :3 2g w .. 2__(___ze) r1: +(t+3)1?c "mm mm, (12) What is the voltage gain vo/vz- of the small-signal equivalent circuit for the common—emitter amplifier shown in the figure, where gm 2 50 millimho , r 2 2kg, R; = 10052, R, = SkQ , rd = 00, R3 = co, and Rx 21kg? 3;. KL fit. f 5995 imfealance Rsfi-é‘gf 1,) ‘KC : @(R'K 5- “ RB H r [email protected]] [@6'2 QSI-I-z‘r-fi 9'“?er (b) {( Rs H RB H r)8m(rd ”R c +rd R C2 (0) (rd “Re” [1+3m(rd H Rd] + (Rs H RB H 0C2 ((1) none of the above (14) For calculating the high frequency corner 0);, of the circuit in the figure below, what is the time constant expression associated with the capacitor C2. capacitors, and C3-— — O.) R: 9 (C1 and C2 are small picofarad—size (a)l(R1+R2)/(1+ng2)l H Rd-Cz (13) (R1 +132) H (1/3m) H Rd'CZ (C) [(R1+R2)-(1+ng2)] ”Rd'CZ @ one of above (15) In the circuit show in the figure, if Rb is increased, which one of the following is correct? (note: IBQ is the base DC current, VCEQ is the DC operating voltage from the collector to the emit- ter, R,- is the input resistance, R0 is the output resistance, and Av,- is the voltage gain. The transistor remains in the active region.) . 14: K9 is mcreassai1 , lease cut‘reurft c1105i ,' hence, Colleftorcurrem’l decreaseg_ $11466 3m: 38.42IIC1J +th News ‘5‘," decreases. va;= ‘3'” RCHZL. Hemfi’, 9V1 lit-”comes less “€361“, or lhcreases. (IT‘S ma. nfl‘unle damages) VCEQ Mame; because Were is léss J"? duress ‘Ra. .T-F Kc is increase Vt: ‘im “?4. games mmwjdwefi“ J decreases. (It’s Magnitude increases) \lCEQ decreases 56W " firm {9 More Ara? across (12¢ '(a) A”- will decrease @hv;,iwill increase (0) VCEQ will decrease ((1) none of the above (16) In the circuit show in Problem 15, if RC is increased, which one of the following is correct? 6(a) fly,- will increase [14,,"wi11 decrease (c) VCEQ will increase ((1) none of the above I-F R'- 15 increased H-VL: ‘Wlficllfzt becomes more “6 alive or decreases. (rt-5 ma. Inhale imam Eh are-fl". uméfiedlefijh 3 ' 1 i D (17) In the circuit show in Fig 15, if RL is increased, which one of the following is correct? (a) Aw- will increase (b) R, will decrease (c) R,- will increase .none of the above (18) For a certain bipolar. junction transistor N = 1/2, Vb,- = .7V, and VBE = 0651/. From the manufacturer’s data sheet, C“ = 2.0pF when VCE = 5V. The value of C,” when VCE 2 10V is (a) 2.0 pF (1)) 0.40 pF (C) 0.26 pF .1.4 pF (6) 1.5 pF CM 1 Cm” C13 '7 1+ “.7 (19) A bipolar junction transistor has f5 2: IOOkHz. At 1 MHz, “3} = 24. At 30 Mrads/sec, ”3| has a' value of (a) 0.8 @3210 (c) 1.25 (d) 6.2 (e) not enough information 03 :Zfi‘f}: .LZK Mmls/s 1 We can use WIN-7‘01" becauSe ’rhe Ld's jzuen Sqfus‘FY 0>3tg€ @-F : | W130? L0: 6.23 HrafiS/s 6.2.9 Zlffgwl‘ 31150.7 Mauls/s “50.7 =7 (9|: W730" 5'0 (‘3 3° ”fags/5 ‘9‘ A? 30 [Bible “Mb/5 / of 4,78 “Ha;- {#30 W'd'S/S Gain fit“ I 42; t 4+ Lei-Pf)? the flatwhawwuflih («fluff (20) For the transistor of the previous problem, IC = 0.3 mA, n=1.1, and Cl! = 3.1 pF. At 25 degrees ‘ C, the capacitance CE is (a) 70.4 pF .673 pF 3 (c) 73.5 pF ((1) 76.9 pF (e) not enough information ' - II}! C" __ 1M _ C : [mama 31,10 ‘2 3 : __. .- 31:32 In! 3 5232(3) 1471- '“ 1879-73 to” ' m “T n ' l 1 -1’2— .07u=:3»\0'(I Jim“) ‘3 flat! 70.3 -%fl Y? =f7¢1 I] u (21) You have Form B. The form that you have is: ' (a) Form A ' Q Form B (c) Form c (d) Form D EE-ZSS Formula Sheet: Exam 3 Data: At 25 ”C (R. T.) VT -_- kT/q = 0.026 volts k= 13806x10“23J/K= 8.613x10“5 eV/K q=1.6022x10"‘9 c FOMUIaS: ex =1+x+x2/2+... 0°C: 273.16K 1: = 13(eVD’M’T —1) VD = I; + Iprf C, 5 900+ Kala)“ rd = —-2 = -L (forward bias) v0 = VJD + vd dzD Q I no Rectifiers: Monolithic Resistors: V — V {—23 R~— R (-9 ‘ r _ M LRCJ _- S W n-channel MOSFETs: ID = kn [2mg — 1g, ms — Vg’s] (ohmic/triads) ID = kn [V95 — Vm]Z (saturation) Vs: > Vm (NOT cut-oft) VDS >_ VGS — V7,, (saturation) p-channel MOSFETs: ID = kp [20/03 — Vn )VDS — V35] (ohmic/Mode) ID = kp [20/50 + Vm )VSD — IQ] (ohmic/triode) [D = ka’os '— V31]: (sanitation) ID = kp [VSG + 14%]2 (saturation) K33 < Vm (NOT cut—off) VSG > — 2:. (NOT cut-off) VDS < VGS - V7,, (saturation) V912 > Km + Vth (saturation) MOSFETS: ' 1 V 1‘ =3— 2f V”, =Vm +y£f2¢f+tg3 ~1/2af] D D Blpolar Transistors l’ag V . at 5 1C: 3.31: efi(1+-I-iE-) (acnve) [fr—fife; OIL-FE I __ V12: - Was (on) C Rm + CB + DRE Thermal Effects: Tdev _ Tan-ab 2 BED Bipolar Amplifiers: I gm =3: 52.9% H}? CE: Aw—gmmcumm) Rimming) RD=R¢Hra.- CE with emitter degeneration: . - RC RL MW Ii,=(R1lle)ll[(r;r+66fr1)Ra)] my CB: Aw = +gm-(RC‘HRL) Ru: RE "Bi—1’ _ Ra = RC = =. 1+ TQHREH‘RL CC A»: ,;r+(1+fl)(ro"RE"RI-) Ri,=(R1'H1%)H [wommuxgum] Row")? "[ng + RflRa HR] - FET Amplifiers: . gm =2JanD = 2fk,,(vm — m r9 =- (M9)" Cs: Aw=—g;(RDIInIIRL) mm) , Row"; CG: Av: =+g,,.(RbuRL) 1% = Rs; "—1— Rt. =RD D: _= gm RSSHRL _ = R1 =RSS i C Aw 1+gm(RssHRL) R1. ( ”132) R, H {3‘ h-Parameters: I Vbe = 111er +>hrche Io = hfer + hoche _ ., 1 (Bo ' ' I Gain as “Gaucher: f 1“: mg : $= ' WT=$¢IJ . O F 1' 7 H- JNCTH ‘44er J, 3 ' cum}. u) (W309) C1r- gi—Cu J Gr: “29"? C“ ...
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