EE305_Fall_10_05

# EE305_Fall_10_05 - ECE 305 Semiconductor Devices...

This preview shows pages 1–3. Sign up to view the full content.

ECE 305: Semiconductor Devices Fundamentals Homework #5: P-N Junction Electrostatics Full Name (Print) ____________________________ Points Check Completed Problems (Q1) 5 [_] (Q2) 5 [_] (Q3) 10, 5x2 [_][_][_] (Q4) 10x4,5 [_][_][_][_][_] ------------------------------------------------------------------------------------------------ Q1. 5.10 Q2. 5.11 Q3. (a) Sketch the band-diagram of the device shown (below along the line indicated) using the four-step method procedure discussed in the class. Assume that k B T=0.025 eV and the statistics is non-degenerate. Also use the following parameters InP InGaAs Metal contact Bandgap 1.5 0.75 Work function 3.0 eV 3.25 eV 3.5 eV P doping Nv intrinsic N doping Nc intrinsic

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
(b) What is the valence band discontinuity at the n-InP and i-InGaAs junction? (c) What is the built-in potential? You should determine this by inspection of the band- diagram. Q4. The following problem addresses the difference between Depletion Approximation vs. “Exact” Solution of the PN Junction. To analyze a semiconductor device, we must solve the continuity equations for electrons and holes, the drift-diffusion equations, which describe how carriers move in response to an electric field, along with Poisson’s equation because
This is the end of the preview. Sign up to access the rest of the document.

{[ snackBarMessage ]}

### Page1 / 4

EE305_Fall_10_05 - ECE 305 Semiconductor Devices...

This preview shows document pages 1 - 3. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online