EE305_Fall_10_05 - ECE 305: Semiconductor Devices...

Info iconThis preview shows pages 1–3. Sign up to view the full content.

View Full Document Right Arrow Icon
ECE 305: Semiconductor Devices Fundamentals Homework #5: P-N Junction Electrostatics Full Name (Print) ____________________________ Points Check Completed Problems (Q1) 5 [_] (Q2) 5 [_] (Q3) 10, 5x2 [_][_][_] (Q4) 10x4,5 [_][_][_][_][_] ------------------------------------------------------------------------------------------------ Q1. 5.10 Q2. 5.11 Q3. (a) Sketch the band-diagram of the device shown (below along the line indicated) using the four-step method procedure discussed in the class. Assume that k B T=0.025 eV and the statistics is non-degenerate. Also use the following parameters InP InGaAs Metal contact Bandgap 1.5 0.75 Work function 3.0 eV 3.25 eV 3.5 eV P doping Nv intrinsic N doping Nc intrinsic
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
(b) What is the valence band discontinuity at the n-InP and i-InGaAs junction? (c) What is the built-in potential? You should determine this by inspection of the band- diagram. Q4. The following problem addresses the difference between Depletion Approximation vs. “Exact” Solution of the PN Junction. To analyze a semiconductor device, we must solve the continuity equations for electrons and holes, the drift-diffusion equations, which describe how carriers move in response to an electric field, along with Poisson’s equation because
Background image of page 2
Image of page 3
This is the end of the preview. Sign up to access the rest of the document.

Page1 / 4

EE305_Fall_10_05 - ECE 305: Semiconductor Devices...

This preview shows document pages 1 - 3. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online