EE305_Fall_10_05

EE305_Fall_10_05 - ECE 305: Semiconductor Devices...

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ECE 305: Semiconductor Devices Fundamentals Homework #5: P-N Junction Electrostatics Full Name (Print) ____________________________ Points Check Completed Problems (Q1) 5 [_] (Q2) 5 [_] (Q3) 10, 5x2 [_][_][_] (Q4) 10x4,5 [_][_][_][_][_] ------------------------------------------------------------------------------------------------ Q1. 5.10 Q2. 5.11 Q3. (a) Sketch the band-diagram of the device shown (below along the line indicated) using the four-step method procedure discussed in the class. Assume that k B T=0.025 eV and the statistics is non-degenerate. Also use the following parameters InP InGaAs Metal contact Bandgap 1.5 0.75 Work function 3.0 eV 3.25 eV 3.5 eV P doping Nv intrinsic N doping Nc intrinsic
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(b) What is the valence band discontinuity at the n-InP and i-InGaAs junction? (c) What is the built-in potential? You should determine this by inspection of the band- diagram. Q4. The following problem addresses the difference between Depletion Approximation vs. “Exact” Solution of the PN Junction. To analyze a semiconductor device, we must solve the continuity equations for electrons and holes, the drift-diffusion equations, which describe how carriers move in response to an electric field, along with Poisson’s equation because
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EE305_Fall_10_05 - ECE 305: Semiconductor Devices...

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