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EE305_Fall_10_07_small_signal - 100 micron Assuming the...

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ECE 305: Semiconductor Devices Fundamentals Homework #8: P-N Junction Diode Small-Signal Admittance Full Name (Print) ____________________________ Points Check Completed Problems (Q1) 5 [_] (Q2) 5 [_] (Q3) 5 [_] (Q4) 5 [_] ------------------------------------------------------------------------------------------------ Q1. 7.1 Q2. 7.4 Q3. 14.7 Q4. The first bipolar transistor invented in 1947 was a Schottky barrier transistors with W(emitter)-Ge(base, N-doped)-W(collector) contact. The base width was approximately
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Unformatted text preview: 100 micron. Assuming the workfunction for Tungsten is 4.55 eV and Ge sheet resistivity of 10 ohm-cm, solve the following problem: Draw the band-diagram in equilibrium. What is the width of the (one sided) depletion layer? Draw the band-diagram with V EB =0.3 volts, and V CB =-5 V. Find the new depletion with for Base-Emitter and Base-Collector junction. REF. J. Bardeen and W. Brattain, “The Transistor, A Semi-Conductor Triode, Physical Review, vol. 75(8), p. 230, April 1949....
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  • Fall '08
  • P-n junction, Semiconductor Devices Fundamentals, W. Brattain, Diode Small-Signal Admittance, Schottky barrier transistors

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